Rev. 1.10
38
October 23, 2020
Rev. 1.10
39
October 23, 2020
BC66F5652
2.4GHz RF Transceiver A/D Flash MCU
BC66F5652
2.4GHz RF Transceiver A/D Flash MCU
the erase page, then write dummy data into the FD0H register to tag address. The current address
will be internally incremented by one after each dummy data is written into the FD0H register.
When the address reaches the page boundary, 11111b, the address will not be further incremented
but stop at the last address of the page. Note that the write operation to the FD0H register is used
to tag address, it must be implemented to determine which addresses to be erased.
3. Execute a Blank Check operation to ensure whether the page erase operation is successful or not.
The “TABRD” instruction should be executed to read the flash memory contents and to check if
the contents is 0000h or not. If the flash memory page erase operation fails, users should go back
to Step 2 and execute the page erase operation again.
4. Write data into the specific page. Refer to the “Flash Memory Write Procedure” for details.
5. Execute the “TABRD” instruction to read the flash memory contents and check if the written
data is correct or not. If the data read from the flash memory is different from the written data,
it means that the page write operation has failed. The CLWB bit should be set high to clear the
write buffer and then write the data into the specific page again if the write operation has failed.
6. Clear the CFWEN bit to disable the Flash Memory Erase/Write function enable mode if the current
page Erase and Write operations are completed and no more pages need to be erased or written.
Flash Memory
Erase/Write Flow
Clear CFWEN bit
Disable Flash Memory
Erase/Write Function
END
Blank Check
Page Data=0000h?
Yes
No
Verify
Page Data
Correct?
Yes
No
Flash Memory
(Page) Write Procedure
(*)
Flash Memory Erase/Write
Function Enable Procedure
(*)
(CFWEN=1)
Page Erase
Flash Memory
Set CLWB bit
Flash Memory Erase/Write Flow
Note: * The Flash Memory Erase/Write Function Enable procedure and Flash Memory Write
procedure will be described in the following sections.