Rev. 1.10
20
October 23, 2020
Rev. 1.10
21
October 23, 2020
BC66F5652
2.4GHz RF Transceiver A/D Flash MCU
BC66F5652
2.4GHz RF Transceiver A/D Flash MCU
Input/Output Characteristics
Ta=-40°C~85°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
Conditions
V
IL
Input Low Voltage for I/O Ports
—
—
0.0
—
0.2V
DD
V
V
IH
Input High Voltage for I/O Ports
—
—
0.8V
DD
—
V
DD
V
I
OL
Sink Current for I/O Ports
3V V
OL
=0.1V
DD
16
32
—
mA
I
OH
Source Current for I/O Ports
3V
V
OH
=0.9V
DD
,
SLEDCn[m+1:m]=00B
(n=0, 1; m=0, 2, 4, 6)
-0.7
-1.5
—
mA
3V
V
OH
=0.9V
DD
,
SLEDCn[m+1:m]=01B
(n=0, 1; m=0, 2, 4, 6)
-1.3
-2.5
—
3V
V
OH
=0.9V
DD
,
SLEDCn[m+1:m]=10B
(n=0, 1; m=0, 2, 4, 6)
-1.8
-3.6
—
3V
V
OH
=0.9V
DD
,
SLEDCn[m+1:m]=11B
(n=0, 1; m=0, 2, 4, 6)
-4
-8
—
R
PH
Pull-high Resistance for I/O Ports
(Note)
3V LVPU=0, PXPU=FFH
(PX: PA, PB, PC, PD)
20
60
100
kΩ
3V LVPU=1, PXPU=FFH
(PX: PA, PB, PC, PD)
6.67 15.00 23.00
kΩ
I
LEAK
Input Leakage Current
3V V
IN
=V
DD
or V
IN
=V
SS
—
—
±1
μA
t
TPI
TM Capture Input Pin Minimum Pulse Width —
—
0.3
—
—
μs
t
TCK
TM Clock Input Pin Minimum Pulse Width
—
—
0.3
—
—
μs
t
INT
External Interrupt Minimum Pulse Width
—
—
10
—
—
μs
Note: The R
PH
internal pull-high resistance value is calculated by connecting to ground and enabling the input pin
with a pull-high resistor and then measuring the pin current at the specified supply voltage level. Dividing
the voltage by this measured current provides the R
PH
value.
Memory Characteristics
Ta=-40°C~85°C
, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
Conditions
V
RW
V
DD
for Read / Write
—
—
V
DDmin
—
V
DDmax
V
Flash Program Memory / Data EEPROM Memory
t
FWR
Flash Program Memory Write Time
— FWERTS=0
—
2.2
2.7
ms
— FWERTS=1
—
3.0
3.6
t
FER
Flash Program Memory Erase Time
— FWERTS=0
—
3.2
3.9
ms
— FWERTS=1
—
3.7
4.5
t
EERD
EEPROM Read Time
—
—
—
—
4
t
SYS
t
EEWR
EEPROM Write Time (Byte Mode)
— EWERTS=0
—
5.4
6.6
ms
— EWERTS=1
—
6.7
8.1
ms
EEPROM Write Time (Page Mode)
— EWERTS=0
—
2.2
2.7
ms
— EWERTS=1
—
3.0
3.6
ms
t
EEER
EEPROM Erase Time
— EWERTS=0
—
3.2
3.9
ms
— EWERTS=1
—
3.7
4.5
ms
E
P
Cell Endurance – Flash Program Memory —
—
10K
—
—
E/W
Cell Endurance – Data EEPROM Memory —
—
100K
—
—
E/W