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9 Technical Data and Conformity | 9.2 Performance Data and Specifications | Sigma 500 and Sigma 500 VP
ZEISS
Parameter
Description
VPSE detector
(optional, only for VP mode):
Fourth generation variable pressure secondary electron detector for
imaging in VP mode with up to 85 % improvement in Weber contrast
ratio
C2D detector
Cascade Current Detector with floating amplifier electronics, for en-
hanced imaging in Variable Pressure mode up to 133 Pa. Delivers de-
tail at low kV for specimens that demand higher pressures, e.g. poly-
mers, bio specimens, pharmaceuticals, powders, and fibers. Enhanced
signal-to-noise ratio versus VPSE detector.
aBSD1-LH detector
(optional):
Pneumatically retractable 5 segment multi-mode solid state BSE de-
tector; enables materials contrast, crystal orientation, and topographic
imaging
HDBSD detector
(optional):
High definition retractable four quadrant or five segment 16 mm solid
state diode backscattered detector fitted below the objective lens as-
sembly. Provides superb compositional BSE imaging at low kV of met-
als, polymers, minerals, etc. both in HV and VP modes.
BSD4 detector
(optional):
Pneumatically retractable multi-mode solid state Backscattered Elec-
tron Detector (BSD); enables materials contrast, crystal orientation,
and topographic imaging; diode with 4 sectors and one additional
segment. Provides 4 parallel outputs for 3D surface reconstruction
and surface roughness measurements. Can be used in conjunction
with optional metrology software.
YAG BSD detector
(optional):
Robust, fully retractable, YAG-crystal-based BSE scintillator detector
with rise time ~200 ns. Easy to use with no amplifier gain adjustment
required.
HDAsB detector
(optional):
Crystallographic and channeling contrast imaging of metals and min-
erals. Four-quadrant solid state BSD diode (each segment 10 mm²) in-
tegrated in the Gemini objective lens for the detection of angular se-
lective backscattered (AsB) electrons. BSD imaging is possible at accel-
eration voltages above 1 kV. Allows operation at short working dis-
tance.
Modified instrument resolution because of the 2 mm additional
height of the HDAsB detector is indicated in the resolution values. The
WD indication is automatically corrected, i.e. the displayed WD is the
real distance between the specimen surface and the HDAsB detector
bottom side.
CL detector
(optional):
Cathodoluminiscence (CL) chamber detector (option for non-VP con-
figurations, included in VP option)
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Instruction Manual ZEISS SIGMA series | en-US | Rev. 7 | 352102-9344-006