Hitachi HD64411 Q2, Руководство пользователя

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177
7 . 4 Electrical Characteristics
7 . 4 . 1 DC Characteristics
Table 7-3 DC Characteristics
(Unless otherwise indicated, V
C C
= CPUV
C C
= PLLV
C C
= 5.0 V
±
5%,
GND = CPUGND = PLGND = 0 V, Ta = 0 to +70
°
C)
I t e m
P i n
N a m e s
Symbol Min M a x U n i t Test Conditions
Input high voltage
(CMOS level) I1 V
IHC
0.8
×
VCC V
CC
+ 0.3 V
Input low voltage
(CMOS level) V
ILC
–0.3 0.8
Input high voltage
(TTL level) I2, IO1,
IO2 V
IHT
2.2 V
CC
+ 0.3 V
Input low voltage
(TTL level) V
ILT
–0.3 0.8
Input leakage
current I1, I2 I
in
–2.5 2.5
µ
A V
in
= 0 to V
CC
Three-state
leakage current
(off state) IO1, IO2 I
TSI
–10 10 V
in
= 0.4 to V
CC
Output high
voltage (5 V) IO1, O1 V
OH
V
CC
– 1.0 — V I
OH
= –400
µ
A
Output high
voltage IO2, O2 V
OH
CPUV
CC
–
1.0
— I
OH
= –400
µ
A
CPUV
CC
= 5.0 V
±
5%
CPUV
CC
–
0.5
— I
OH
= –200
µ
A
CPUV
CC
= 3.0 V to 3.6 V
Output low
voltage IO1, IO2,
O1, O2 V
OL
— 0.4 I
OL
= 2.0 mA
Input capacitance IO1, IO2 Cin — 20 pF Vin = 0 V
I1, I2 — 20
Ta = 25
°
C
f = 1.0 MHz
Current dissipation I
CC
— 150 mA Data bus operation in
progress/display
operation in
progress/command
execution in progress
Note: The symbols used in table 7-3 are explained below.