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Appendix F NVM Electrical Parameters
MC9S12ZVM Family Reference Manual Rev. 1.3
778
Freescale Semiconductor
Table F-1. NVM Timing Characteristics (Junction Temperature From –40
°
C To +150
°
C)
Num
C
Command
f
NVMOP
cycle
f
NVMBUS
cycle
Symbol
Min
(1)
1. Minimum times are based on maximum f
NVMOP
and maximum f
NVMBUS
Typ
(2)
2. Typical times are based on typical f
NVMOP
and typical f
NVMBUS
Max
(3)
3. Maximum times are based on typical f
NVMOP
and typical f
NVMBUS
plus aging
Worst
(4)
4. Worst times are based on minimum f
NVMOP
and minimum f
NVMBUS
plus aging
Unit
1
Bus frequency
1
—
f
NVMBUS
1
50
50
MHz
2
NVM Operating frequency
—
1
f
NVMOP
0.8
1.0
1.05
MHz
3
D Erase Verify All Blocks
0
33760
t
RD1ALL
0.68
0.68
1.35
67.52
ms
4
D Erase Verify Block (Pflash)
(5)
5. Affected by Pflash size
0
33320
t
RD1BLK_P
0.67
0.67
1.33
66.64
ms
5
D Erase Verify Block (EEPROM)
(6)
6. Affected by EEPROM size
0
823
t
RD1BLK_D
0.02
0.02
0.03
1.65
ms
6
D Erase Verify P-Flash Section
0
505
t
RD1SEC
0.01
0.01
0.04
2.02
ms
7
D Read Once
0
481
t
RDONCE
9.62
9.62
9.62
481.00
us
8
D Program P-Flash (4 Word)
164
3077
t
PGM_4
0.22
0.23
0.41
12.51
ms
9
D Program Once
164
3054
t
PGMONCE
0.22
0.23
0.23
3.26
ms
10
D Erase All Blocks
100066
34223
t
ERSALL
95.99
100.75
101.43
193.53
ms
11
D Erase Flash Block (Pflash)
100060
33681
t
ERSBLK_P
95.97
100.73
101.41
192.44
ms
12
D Erase Flash Block (EEPROM)
100060
1154
t
ERSBLK_D
95.32
100.08
100.11
127.38
ms
13
D Erase P-Flash Sector
20015
914
t
ERSPG
19.08
20.03
20.05
26.85
ms
14
D Unsecure Flash
100066
34288
t
UNSECU
95.99
100.75
101.44
193.66
ms
15
D Verify Backdoor Access Key
0
493
t
VFYKEY
9.86
9.86
9.86
493.00
us
16
D Set User Margin Level
0
427
t
MLOADU
8.54
8.54
8.54
427.00
us
17
D Set Factory Margin Level
0
436
t
MLOADF
8.72
8.72
8.72
436.00
us
18
D Erase Verify EEPROM Sector
0
583
t
DRD1SEC
0.01
0.01
0.05
2.33
ms
19
D Program EEPROM (1 Word)
68
1657
t
DPGM_1
0.10
0.10
0.20
6.71
ms
20
D Program EEPROM (2 Word)
136
2660
t
DPGM_2
0.18
0.19
0.35
10.81
ms
21
D Program EEPROM (3 Word)
204
3663
t
DPGM_3
0.27
0.28
0.50
14.91
ms
22
D Program EEPROM (4 Word)
272
4666
t
DPGM_4
0.35
0.37
0.65
19.00
ms
23
D Erase EEPROM Sector
5015
810
t
DERSPG
4.79
5.03
20.34
38.85
ms
24
D Protection Override
0
475
t
PRTOVRD
9.50
9.50
9.50
475.00
us
Содержание MC9S12ZVM series
Страница 116: ...Chapter 2 Port Integration Module S12ZVMPIMV1 MC9S12ZVM Family Reference Manual Rev 1 3 116 Freescale Semiconductor ...
Страница 242: ...Chapter 7 ECC Generation Module SRAM_ECCV1 MC9S12ZVM Family Reference Manual Rev 1 3 242 Freescale Semiconductor ...
Страница 384: ...Chapter 10 Supply Voltage Sensor BATSV3 MC9S12ZVM Family Reference Manual Rev 1 3 384 Freescale Semiconductor ...
Страница 484: ...Chapter 13 Programmable Trigger Unit PTUV2 MC9S12ZVM Family Reference Manual Rev 1 3 484 Freescale Semiconductor ...
Страница 662: ...Chapter 17 Gate Drive Unit GDUV4 MC9S12ZVM Family Reference Manual Rev 1 3 662 Freescale Semiconductor ...
Страница 684: ...Chapter 18 LIN Physical Layer S12LINPHYV2 MC9S12ZVM Family Reference Manual Rev 1 3 684 Freescale Semiconductor ...
Страница 740: ...Chapter 19 128 KB Flash Module S12ZFTMRZ128K512V2 MC9S12ZVM Family Reference Manual Rev 1 3 740 Freescale Semiconductor ...
Страница 756: ...Appendix A MCU Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 756 Freescale Semiconductor ...
Страница 772: ...Appendix D LINPHY Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 772 Freescale Semiconductor ...
Страница 776: ...Appendix E GDU Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 776 Freescale Semiconductor ...
Страница 788: ...Appendix I MSCAN Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 788 Freescale Semiconductor ...
Страница 790: ...Appendix J Package Information MC9S12ZVM Family Reference Manual Rev 1 3 790 Freescale Semiconductor ...