![Freescale Semiconductor MC9S12ZVM series Скачать руководство пользователя страница 769](http://html1.mh-extra.com/html/freescale-semiconductor/mc9s12zvm-series/mc9s12zvm-series_reference-manual_2330602769.webp)
Appendix D LINPHY Electrical Specifications
MC9S12ZVM Family Reference Manual Rev. 1.3
Freescale Semiconductor
769
Appendix D
LINPHY Electrical Specifications
D.1
Static Electrical Characteristics
Table D-1. Static electrical characteristics of the LINPHY (Junction Temperature From -40
°
C To +175
°
C)
Characteristics noted under conditions 7V
≤
V
LINSUP
≤
18 V unless otherwise noted
(1)
.
(2)
Typical values noted reflect the
approximate parameter mean at T
A
= 25˚C under nominal conditions unless otherwise noted.
1. For 3.5V<=V
LINSUP
<7V, the LINPHY is still working but with degraded parametrics.
2. The V
LINSUP
voltage is provided by the VLINSUP supply. This supply mapping is described in device level documentation
Num
C
Ratings
Symbol
Min
Typ
Max
Unit
1
C
V
LINSUP
range for LIN compliant electrical
characteristics
V
LINSUP
7
1
12
18
V
2
M
Current limitation into the LIN pin in dominant state
(3)
V
LIN
= V
LINSUP_LIN_MAX
3. At temperatures above 25
°
C the current may be naturally limited by the driver, in this case the limitation circuit is not engaged
and the flag is not set.
I
LIN_LIM
40
—
200
mA
3
M
Input leakage current in dominant state
(V
LIN
= 0V, V
LINSUP
= 12V)
I
LIN_PAS_dom
-1
—
—
mA
4
M
Input leakage current in recessive state
(8V<V
LINSUP
<18V, 8V<V
LIN
<18V, V
LIN
>= V
LINSUP
)
I
LIN_PAS_rec
—
—
20
µ
A
5
T
Input leakage current when ground disconnected
(GND
Device
= V
LINSUP
, 0V<V
LIN
<18V, V
LINSUP
= 12V)
I
LIN_NO_GND
-1
—
1
mA
6
T
Input leakage current when battery disconnected
(V
LINSUP
= GND, 0<V
LIN
<18V)
I
LIN_NO_BAT
—
—
30
µ
A
7
M
Receiver dominant state
V
LINdom
—
—
0.4
V
LINSUP
8
M
Receiver recessive state
V
LINrec
0.6
—
—
V
LINSUP
9
M
V
LIN_CNT
=(V
th_dom
+ V
th_rec
)/2
V
LIN_CNT
0.475
0.5
0.525
V
LINSUP
10
M
V
HYS
= V
th_rec
-V
th_dom
V
HYS
—
—
0.175
V
LINSUP
11
—
Maximum capacitance allowed on slave node
C
slave
—
220
250
pF
12a
T
Capacitance of LIN pin -40
°
C < T
J
< 150
°
C,
Recessive state
C
int
—
20
—
pF
12b
D
Capacitance of LIN pin -40
°
C < T
J
< 150
°
C,
Recessive state
C
int
—
—
45
pF
12c
D
Capacitance of LIN pin 150
°
C < T
J
< 175
°
C,
Recessive state
C
int
—
—
39
pF
13
M
Internal pull-up (slave)
R
slave
27
34
40
k
Ω
Содержание MC9S12ZVM series
Страница 116: ...Chapter 2 Port Integration Module S12ZVMPIMV1 MC9S12ZVM Family Reference Manual Rev 1 3 116 Freescale Semiconductor ...
Страница 242: ...Chapter 7 ECC Generation Module SRAM_ECCV1 MC9S12ZVM Family Reference Manual Rev 1 3 242 Freescale Semiconductor ...
Страница 384: ...Chapter 10 Supply Voltage Sensor BATSV3 MC9S12ZVM Family Reference Manual Rev 1 3 384 Freescale Semiconductor ...
Страница 484: ...Chapter 13 Programmable Trigger Unit PTUV2 MC9S12ZVM Family Reference Manual Rev 1 3 484 Freescale Semiconductor ...
Страница 662: ...Chapter 17 Gate Drive Unit GDUV4 MC9S12ZVM Family Reference Manual Rev 1 3 662 Freescale Semiconductor ...
Страница 684: ...Chapter 18 LIN Physical Layer S12LINPHYV2 MC9S12ZVM Family Reference Manual Rev 1 3 684 Freescale Semiconductor ...
Страница 740: ...Chapter 19 128 KB Flash Module S12ZFTMRZ128K512V2 MC9S12ZVM Family Reference Manual Rev 1 3 740 Freescale Semiconductor ...
Страница 756: ...Appendix A MCU Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 756 Freescale Semiconductor ...
Страница 772: ...Appendix D LINPHY Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 772 Freescale Semiconductor ...
Страница 776: ...Appendix E GDU Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 776 Freescale Semiconductor ...
Страница 788: ...Appendix I MSCAN Electrical Specifications MC9S12ZVM Family Reference Manual Rev 1 3 788 Freescale Semiconductor ...
Страница 790: ...Appendix J Package Information MC9S12ZVM Family Reference Manual Rev 1 3 790 Freescale Semiconductor ...