31 ELECTRICAL CHARACTERISTICS
31-8
Seiko Epson Corporation
S1C33L26 TECHNICAL MANUAL
SRAM write cycle
MCLK
CMU_CLK
A[25:0]
#CE
x
#WR
x
D[15:0]
#WAIT
t
CD
t
CYC
t
AD
t
CED
t
WRD
t
WRD
t
AD
t
CED
valid
valid
t
WRDD
t
WTS
t
WRDH
t
WTH
t
WRW
Unless otherwise specified: LV
DD
= 1.65 to 1.95V, HV
DD
= 2.7 to 3.6V, V
SS
= 0V, external load = 50pF, Ta = -40 to 85°C
Item
Symbol
Min.
Typ.
Max.
Unit
CMU_CLK output delay time
t
CD
–
–
22
ns
Address delay time
t
AD
–
–
13
ns
#CE
x
delay time
t
CED
–
–
13
ns
Write delay time
t
WRD
–
–
13
ns
Write data delay time
t
WRDD
–
–
13
ns
Write data hold time
t
WRDH
0
–
–
ns
Read delay time
t
RDD
–
–
13
ns
Read data setup time
t
RDS
13
–
–
ns
Read data hold time
t
RDDH
0
–
–
ns
Write signal pulse width
t
WRW
t
CYC
(1 + WC) - 13
–
–
ns
Read signal pulse width
t
RDW
t
CYC
(1 + WC) - 13
–
–
ns
#WAIT setup time
t
WTS
12
–
–
ns
#WAIT hold time
t
WTH
0
–
–
ns
WC: Number of wait cycles
SDRAMC AC Characteristics
31.8.3
SDRAM access cycle
(write)
(read)
(Column)
(Bank, Row)
Bank active
(Column)
t
WEH
t
CASH
SDCLK
SDCKE
SDBA[1:0]
SDA[12:11]
SDA[9:0]
SDA10
#SDCS
#SDRAS
#SDCAS
#SDWE
D[15:0]
DQMH/
DQML
t
AD
t
AH
t
A10H
Read
Nop
H
valid
valid
valid
t
A10D
t
CSD
t
CSH
t
WED
t
WED
t
WDD
t
WEH
t
DQMD
t
WDH
t
DQMH
valid
valid
valid
valid
valid
valid
Idle
Nop
Write
t
RASD
t
RASH
t
CASD
t
RDH
t
RDS
*
Read: CAS latency = 2, burst length = 2 Write: single write