TC32306FTG
2015-10-01
40
between EEPROM address and the register address of this IC are shown in Table 6-40.
6.7.8 EEPROM Control Data Format
In EEPROM Mode, TC32306FTG operates Burst Read for the EEPROM. The configuration is selected
by the combination of TX_SW pin, RX_SW pin and ENB pin.
Notice:
- The memory size of 1 k, 2 k and 4 k bit are available for EEPROM. The configuration of 2,4 and 8 are
available respectively.
- Select EEPROM adapted for Burst Read.
- The serial clock (= CLK pin output signal) to read EEPROM data generated by the inner oscillator of
TC32306FTG is frequency of about 2 MHz. Select EEPROM adapted for that frequency.
(1)
Set the configuration with TX_SW pin, RX_SW pin and ENB pin from MCU. Then set RESET pin is
“H”. (= The reset is released.) The configuration change is available all the time, however the
operation is valid at the timing of change of RESET pin from “L” to “H”.
(2)
TC32306FTG operates Burst Read to the first set data area of EEPROM through SPI lines. Burst
Read operates from the start address till the end address of the configuration data sequentially. After
the reading, this IC starts to Run as the configuration of first set data area.
(3)
This IC operates Burst Read to the second and third set data area continuously, then the register
setting is fixed by majority logic.
(4)
This IC runs depending on the register:h’0A[D6]ACT.
Fig 6-24 Read Format from EEPROM (EEPROM Mode)
- - -
- - -
CLK
CS
MISO
MOSI
- - -
- - -
- - -
- - -
Instruction Address
Read
Data
Read
Data
Read
Data
Read
Data
Read
Data
Read
Data
AD0
AD1
AD2
AD3
AD4
AD5
AD6
AD7
Instruction
Address
0 0 0 0
0
X
1 1
D0
D1
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3
D4
D5
D6
D7
D7
D6
D1
D0
Read
Data
Read
Data
MOSI
MISO
X
:
”
0
”
at EEPROM Address < 256,
”
1
”
at EEPROM Address
≥
256
Don
’
t care
Low
Low
N
N+1
N+2
N+3