Samsung SC32442B54, User Manual

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SC32442B RISC MICROPROCESSOR ELECTRICAL DATA
25-
3
Table25- 3 Normal I/O PAD DC Electrical Characteristics
Normal I/O PAD DC Electrical Characteristics for Memory (V
DDMOP
= 1.8V
±
0.1V, T
A
= -25 to 85
°
C)
Symbol Parameters Condition Min Typ. Max Unit
High level input voltage
V
IH
LVCMOS interface 0.65V
DD
V
DD
+0.3
V
Low level input voltage
V
IL
LVCMOS interface -0.3 0.35V
DD
V
VT Switching threshold 0.5V
DD
V
VT+ Schmitt trigger, positive-going threshold CMOS 1.27 V
VT- Schmitt trigger, negative-going threshold CMOS 0.57 V
High level input current
I
IH
Input buffer
V
IN
= V
DD
8.879 45.18
µA
Low level input current
Input buffer
I
IL
Input buffer with pull-up
V
IN
= V
SS
10.17 32.85
µA
High level output voltage
I
OH
= - 10 uA
1.6995
I
OH
= -100 uA
1.6950
Type B6
I
OH
= - 6 mA
1.159 1.559 1.889
Type B8
I
OH
= - 8 mA
1.159 1.559 1.886
Type B10
I
OH
= -10 mA
1.159 1.559 1.886
V
OH
Type B12
I
OH
= -12 mA
1.159 1.559 1.886
V
Low level output voltage
I
OL
= 10 uA
0.475mV
I
OL
= 100 uA
4.744mV
Type B6
I
OL
= 6 mA
0.126 0.221 0.394
Type B8
I
OL
= 8 mA
0.125 0.220 0.394
Type B10
I
OL
= 10 mA
0.125 0.219 0.394
V
OL
Type B12
I
OL
= 12 mA
0.124 0.219 0.394
V
NOTES: The electrical spec. of VDDmop is only simulation data
Capacitance (V
DDMOP
= 1.8V
±
0.1V, T
A
= -25 to 85
°
C)
Normal I/O PAD DC Electrical Characteristics for I/O
Pin Symbol Min Max Unit Note
SCLk, DQM, ADDR, DATA, RAS, CAS, WE, CS, CKE Cin - 5 pF