Samsung SC32442B54, User Manual

Page: 608 / 647

K5D2G13ACM-D075
Revision 1.0
December 2006
53
MCP MEMORY
1. In order to save power consumption, Mobile SDR SDRAM has PASR option.
2. Mobile SDR SDRAM supports 3 kinds of PASR in self refresh mode : Full array, 1/2 array, 1/4 array
BA1=0
- Full Array - 1/2 Array
- 1/4 Array
Partial Self Refresh Area
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
- Apply VDD before or at the same time as VDDQ.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.
For operating with DS or PASR, set DS or PASR mode in EMRS setting stage.
In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not
needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
BA0=0
BA1=0
BA0=0 BA1=0
BA0=1
BA1=1
BA0=1 BA1=1
BA0=0 BA1=1
BA0=1 BA1=1
BA0=0
BA1=0
BA0=1 BA1=0
BA0=0 BA1=0
BA0=1
BA1=1
BA0=1 BA1=1
BA0=0
Partial Array Self Refresh
Temperature Compensated Self Refresh
B. POWER UP SEQUENCE
1. In order to save power consumption, Mobile SDR SDRAM includes the internal temperature sensor and control units to control the
self refresh cycle automatically according to the two temperature range ; 45
°
C and 85
°
C.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
Note :
1. It has +/- 5
°
C tolerance.
Temperature Range
Self Refresh Current (IDD6)
Unit
Full Array 1/2 Array 1/4 Array
45
°
C
*1 250 220 205
uA
85
°
C 500 400 350