Samsung SC32442B54, User Manual

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K5D2G13ACM-D075
Revision 1.0
December 2006
74
MCP MEMORY
Note:
1) All input except CKE & DQM can be ’don't care’ when CS is high at the CLK high going edge.
2) Bank active & read/write are controlled by BA0,BA1.
3) Enable and disable auto precharge function are controlled by A10/AP in read/write command.
4) A10/AP and BA0~BA1 control bank precharge when precharge command is asserted.
64Mb/128Mb 256Mb/512Mb
Active & Read/Write
BA0 BA1 BA0 BA1
0 0 0 0 Bank A
0 1 1 0 Bank B
1 0 0 1 Bank C
1 1 1 1 Bank D
A10/AP
64Mb/128Mb 256Mb/512Mb
Operation
BA0 BA1 BA0 BA1
0
0 0 0 0 Disable auto precharge, leave bank A active at end of burst.
0 1 1 0 Disable auto precharge, leave bank B active at end of burst.
1 0 0 1 Disable auto precharge, leave bank C active at end of burst.
1 1 1 1 Disable auto precharge, leave bank D active at end of burst.
1
0 0 0 0 Enable auto precharge, precharge bank A at end of burst.
0 1 1 0 Enable auto precharge, precharge bank B at end of burst.
1 0 0 1 Enable auto precharge, precharge bank C at end of burst.
1 1 1 1 Enable auto precharge, precharge bank D at end of burst.
A10/AP
64Mb/128Mb 256Mb/512Mb
Precharge
BA0 BA1 BA0 BA1
0 0 0 0 0 Bank A
0 0 1 1 0 Bank B
0 1 0 0 1 Bank C
0 1 1 1 1 Bank D
1 x x x x All Banks