CHAPTER 27 ELECTRICAL SPECIFICATIONS (TARGET VALUES)
Preliminary User’s Manual U16315EJ1V0UD
424
Flash Memory Programming Characteristics:
µµµµ
PD78F0124
(T
A
= +10 to +60
°°°°
C, 2.7 V
≤≤≤≤
V
DD
= EV
DD
≤≤≤≤
5.5 V, 2.7 V
≤≤≤≤
AV
REF
≤≤≤≤
V
DD
, V
SS
= EV
SS
= AV
SS
= 0 V)
(1) Write erase characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
PP
supply voltage
V
PP2
During flash memory programming
9.7
10.0
10.3
V
V
DD
supply current
I
DD
When V
PP
= V
PP2
, f
XP
= 10 MHz, V
DD
= 5.5 V
37
mA
V
PP
supply current
I
PP
V
PP
= V
PP2
100
mA
Step erase time
Note 1
T
er
0.199
0.2
0.201
s
Overall erase time
Note 2
T
era
When step erase time = 0.2 s
20
s/chip
Writeback time
Note 3
T
wb
49.4
50
50.6
ms
Number of writebacks per 1
writeback command
Note 4
C
wb
When writeback time = 50 ms
60
Times
Number of erases/writebacks
C
erwb
16
Times
Step write time
Note 5
T
wr
48
50
52
µ
s
Overall write time per word
Note 6
T
wrw
When step write time = 50
µ
s (1 word = 1
byte)
48
520
µ
s
Number of rewrites per chip
Note 7
C
erwr
1 erase + 1 write after erase = 1 rewrite
20
Times
Notes 1.
The recommended setting value of the step erase time is 0.2 s.
2.
The prewrite time before erasure and the erase verify time (writeback time) are not included.
3.
The recommended setting value of the writeback time is 50 ms.
4.
Writeback is executed once by the issuance of the writeback command. Therefore, the number of retries
must be the maximum value minus the number of commands issued.
5.
The recommended setting value of the step write time is 50
µ
s.
6.
The actual write time per word is 100
µ
s longer. The internal verify time during or after a write is not
included.
7.
When a product is first written after shipment, “erase
→
write” and “write only” are both taken as one
rewrite.
Example: P: Write, E: Erase
Shipped product
→
P
→
E
→
P
→
E
→
P: 3 rewrites
Shipped product
→
E
→
P
→
E
→
P
→
E
→
P: 3 rewrites
Remark
The range of the operating clock during flash memory programming is the same as the range during normal
operation.