Order Number: 334785-002
Intel
®
Xeon
®
Phi™ Processor x200 Product Family TMSDG
45
Thermal Specifications and Design Guidelines
.
Figure 6-1. Processor Package Thermocouple Locations, Top view
The processor and MCDRAM T
CASE
value will be influenced by the other powered
devices integrated on the MCP. This relationship is described in the following equations:
T
CASE_CPU
= T
LA
+
CC
* P
CPU
+
CM
* P
MCDRAM
+
CF
* P
Fabric
T
CASE_MCDRAM
= T
LA
+
MC
* P
CPU
+
MM
* P
MCDRAM
+
MF
* P
Fabric
Table 6-3.
Processor T
CASE
Influence Parameters
Parameter
Description
Reference Solution
Expected Value
T
case_CPU
Temperature on the IHS surface above the processor hot spot
Calculated
T
case_MCDRAM
Temperature on the IHS surface above the MCDRAM hot spot
Calculated
T
LA
Temperature of the local ambient air at the heatsink inlet
< 40
°
C
P
CPU
Power dissipated by the processor
Workload Dependent
1
P
MCDRAM
Power dissipated by MCDRAMs
Workload Dependent
1
P
FABRIC
Power dissipated by the fabric controller (processor with fabric only) Workload Dependent
1
CC
Thermal resistance: IHS processor hot spot due to its own power
0.212
°
C/W
CM
Thermal resistance: IHS processor hot spot due to MCDRAM power
0.134
°
C/W
CF
Thermal resistance: IHS processor hot spot due to fabric power
0.140
°
C/W
MC
Thermal resistance: IHS MCDRAM hot spot due to processor power
0.147
°
C/W
MM
Thermal resistance: IHS MCDRAM hot spot due to its own power
0.177
°
C/W
MF
Thermal resistance: IHS MCDRAM hot spot due to fabric power
0.196
°
C/W
Note:
1. Though the constituent device powers may vary with workload, the combined powers must add up to
be less than or equal to the Thermal Design Power (TDP).
