AT90S/LS2333 and AT90S/LS4433
82
Serial Programming Characteristics
Figure 68. Serial Programming Timing
Table 36. Serial Programming Characteristics
T
A
= -40
°
C to 85
°
C, V
CC
= 2.7 - 6.0V (Unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
1/t
CLCL
Oscillator Frequency (V
CC
= 2.7 - 6.0V)
0
4
MHz
t
CLCL
Oscillator Period (V
CC
= 2.7 - 6.0V)
250
ns
1/t
CLCL
Oscillator Frequency (V
CC
= 4.0 - 6.0V)
0
8
MHz
t
CLCL
Oscillator Period (V
CC
= 4.0 - 6.0V)
125
ns
t
SHSL
SCK Pulse Width High
2 t
CLCL
ns
t
SLSH
SCK Pulse Width Low
2 t
CLCL
ns
t
OVSH
MOSI Setup to SCK High
t
CLCL
ns
t
SHOX
MOSI Hold after SCK High
2 t
CLCL
ns
t
SLIV
SCK Low to MISO Valid
10
16
32
ns
Table 37. Minimum wait delay after the Chip Erase instruction
Symbol
3.2V
3.6V
4.0V
5.0V
t
WD_ERASE
18ms
14ms
12ms
8ms
Table 38. Minimum wait delay after writing a Flash or EEPROM location
Symbol
3.2V
3.6V
4.0V
5.0V
t
WD_PROG
9ms
7ms
6ms
4ms
MOSI
MISO
SCK
t
OVSH
t
SHSL
t
SLSH
t
SHOX
t
SLIV