AT90S/LS2333 and AT90S/LS4433
73
Enter Programming Mode
The following algorithm puts the device in parallel programming mode:
1.
Apply supply voltage according to Table 29, between V
CC
and GND.
2.
Set the RESET and BS pin to ‘0’ and wait at least 100 ns.
3.
Apply 11.5 - 12.5V to RESET. Any activity on BS within 100 ns after +12V has been applied to RESET, will cause
the device to fail entering programming mode.
Chip Erase
The Chip Erase command will erase the Flash and EEPROM memories, and the Lock bits. The Lock bits are not reset until
the Flash and EEPROM have been completely erased. The Fuse bits are not changed. Chip Erase must be performed
before the Flash or EEPROM is reprogrammed.
Load Command “Chip Erase”
Table 30. Pin Name Mapping
Signal Name in Programming Mode
Pin Name
I/O
Function
RDY/BSY
PD1
O
0: Device is busy programming, 1: Device is ready for new command
OE
PD2
I
Output Enable (Active low)
WR
PD3
I
Write Pulse (Active low)
BS
PD4
I
Byte Select (‘0’ selects low byte, ‘1’ selects high byte)
XA0
PD5
I
XTAL Action Bit 0
XA1
PD6
I
XTAL Action Bit 1
DATA
PC1-0, PB5-0
I/O
Bidirectional Databus (Output when OE is low)
Table 31. XA1 and XA0 Coding
XA1
XA0
Action when XTAL1 is Pulsed
0
0
Load Flash or EEPROM Address (High or low address byte determined by BS)
0
1
Load Data (High or Low data byte for Flash determined by BS)
1
0
Load Command
1
1
No Action, Idle
Table 32. Command Byte Bit Coding
Command Byte
Command Executed
1000 0000
Chip Erase
0100 0000
Write Fuse Bits
0010 0000
Write Lock Bits
0001 0000
Write Flash
0001 0001
Write EEPROM
0000 1000
Read Signature Bytes
0000 0100
Read Fuse and Lock Bits
0000 0010
Read Flash
0000 0011
Read EEPROM