AT90S/LS2333 and AT90S/LS4433
72
The Program and Data memory arrays on the AT90S2333/4433 are programmed byte-by-byte in either programming
modes. For the EEPROM, an auto-erase cycle is provided within the self-timed write instruction in the serial programming
mode. During programming, the supply voltage must be in accordance with Table 29.
Parallel Programming
This section describes how to parallel program and verify Flash Program memory, EEPROM Data memory, Lock bits and
Fuse bits in the AT90S2333/4433.
Signal Names
In this section, some pins of the AT90S2333/4433 are referenced by signal names describing their function during parallel
programming. See Figure 62 and Table 30. Pins not described in Table 30 are referenced by pin names.
The XA1/XA0 pins determine the action executed when the XTAL1 pin is given a positive pulse. The bit coding are shown
in Table 31.
When pulsing WR or OE, the command loaded determines the action executed. The Command is a byte where the differ-
ent bits are assigned functions as shown in Table 32.
Figure 62. Parallel Programming
Table 29. Supply voltage during programming
Part
Serial programming
Parallel programming
AT90LS2333
2.7 - 6.0 V
4.5 - 5.5 V
AT90S2333
4.0 - 6.0 V
4.5 - 5.5 V
AT90LS4433
2.7 - 6.0 V
4.5 - 5.5 V
AT90S4433
4.0 - 6.0 V
4.5 - 5.5 V
AT90S2333/4433
VCC
+5V
RESET
GND
XTAL1
PD1
PD2
PD3
PD4
PD5
PD6
+12V
RDY/BSY
OE
BS
XA0
XA1
WR
PC1 - PC0,
PB5 - PB0
DATA