TMP92CF30
2009-06-12
92CF30-551
Write cycle
Variable
No. Parameter Symbol
Min Max
80MHz 60MHz Unit
16-1
D0 to D31 valid
→
WR
xx rising at 0 waits
t
DW
1.0T
−
6.0
6.5
10.6
t
DW2
3.0T
−
6.0
31.5
43.8
16-2
D0 to D31 valid
→
WR
xx rising at 2 waits/4 waits
t
DW4
5.0T
−
6.0
56.5
77.0
17-1
WR
xx low width at 0 waits
t
WW
1.0T
−
4.0
8.5
12.6
t
WW2
3.0T
− 4
.0
33.5
45.8
17-2
WR
xx low width at 2 waits/4 waits
t
WW4
5.0T
−
4.0
58.5
79.0
18 A0 to A23 valid
→
WR
falling
t
AW
0.5T
−
5.0
1.25
3.3
19
WR
xx falling
→
SDCLK rising
t
WK
0.5T
−
5.0
1.25
3.3
20
WR
xx rising
→
A0 to A23 hold
t
WA
0.5T
−
5.0
1.25
3.3
21
WR
xx rising
→
D0 to D31 hold
t
WD
0.5T
−
5.0
1.25
3.3
22
RD
rising
→
D0 to D31 output
t
RDO
0.5T
−
1.0
5.25
7.3
23-1 Write width for SRAM at 0 waits
t
SWP
1.0T
−
4.0
8.5 12.6
t
SWP2
3.0T
− 4
.0
33.5
45.8
23-2 Write width for SRAM at 2 waits/4 waits
t
SWP4
5.0T
−
4.0
58.5
79.0
24-1
Data byte control ~ end of write
for SRAM at 0 waits
t
SBW
1.0T
−
4.0
8.5
12.6
t
SBW2
3.0T
−
4.0
33.5
45.8
24-2
Data byte control ~ end of write
for SRAM at 2 waits/4 waits
t
SBW4
5.0T
−
4.0
58.5
79.0
25 Address setup time for SRAM
t
SAS
0.5T
−
5.0
1.25
3.3
26 Write recovery time for SRAM
t
SWR
0.5T
−
5.0
1.25
3.3
27-1 Data setup time for SRAM at 0 waits
t
SDS
1.0T
−
6.0
6.5
10.6
t
SDS2
3.0T
−
6.0
31.5
43.8
27-2
Data setup time for SRAM
at 2 waits/4 waits
t
SDS4
5.0T
−
6.0
56.5
77.0
28 Data hold time for SRAM
t
SDH
0.5T
−
5.0
1.25
3.3
ns
AC measuring condition
•
Data_bus, Address_bus, various function control signal capacitance C
L
=
50 pF
Содержание TLCS-900/H1 Series
Страница 1: ...TOSHIBA Original CMOS 32 Bit Microcontroller TLCS 900 H1 Series TMP92CF30FG Semiconductor Company ...
Страница 650: ...TMP92CF30 2009 06 12 92CF30 648 7 Package Dimensions LQFP176 P 2020 0 40F TOP VIEW BOTTOM VIEW Detail view of A 25 1 A ...
Страница 652: ...TMP92CF30 2009 06 12 92CF30 650 ...