Orbotech SPTS Xactix e1 Series, Руководство пользователя

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Manual Version e1-4.3.0.ae-R3. Page
5
c. Set pump down pressure for chamber and expansion chambers when etching with XeF2
from software user interface. (Available with Purchase of the Advanced Recipe Package).
d. Digital camera integrated with and controlled by the control software to periodically capture
images either at a given time interval or every X pulses, where X is defined by the user in
the GUI. In addition the image from the camera and control of the camera is integrated into
the GUI for controlling the system. (Available with purchase of Imaging Option).
e. Additional heating and temperature control for the gas box, and heating for the expansion
chamber and process chamber. This increases the sublimation pressure of XeF
2
resulting
in significantly faster etch rates. It also increases the process stability by decreasing the
effect of the ambient temperature on all aspects of the process. (Available with purchase of
the heating package).
f. Integrated thermocouple interface for measuring temperature of substrates in the chamber;
including a bulk head connection for two thermocouples in the vacuum stack and automatic
logging and plotting in the GUI of the temperature recorded by the thermocouples.
(Available with purchase of the Advanced Experimentation/Manufacturing Package).
g. Add an MFC and pressure controller to implement a second type of etching which uses a
continuous flow of XeF
2.
This is in addition to the standard pulsed flow etching. The
continuous flow process recipe includes the flow rate of XeF
2
, the pressure of the process
chamber and the time to etch. (Available with Purchase of Continuous Flow Option).
h. High Conductance Mode Etching (Patent Pending). Alternates pulses of XeF
2
and nitrogen
to lower sample temperatures and minimize attack of silicon nitride, titanium nitride and
gold. (Available with purchase of Advanced Recipe Package).
9. Performance:
a. Etch rate range: 0.1-10 µm/min
b. WIW Non-Uniformity (Range/(2 x mean)< 15%
c. R2R Repeatability < 15%
10. XeF
2
Source and Facilities:
a. Source bottle: 300 cc bottle holding up to 600 gm of XeF
2
(not included with system)
b. Power: 120/220 V AC, 20A/10A (220V version is option)
c. N2: 10-20 psi
d. Compressed Dry Air: 70-100 psi
e. Exhaust:
1. Vacuum pump exhaust: 11.1 m
3
/hr
2. Gas box ventilation: -2.5 mm H
2
O static pressure
3. Chamber area ventilation: -25 mm H
2
O static pressure