High-Speed, High-Reliability Erasing: The H8/3048F flash memory uses a high-speed, high-
reliability erasing procedure. This procedure provides enhanced erasing speed without subjecting
the device to voltage stress and without sacrificing data reliability . Figure 18-24 shows the basic
high-speed, high-reliability erasing flowchart. Tables 18-22 and 18-23 list the electrical
characteristics during programming.
Figure 18-24 High-Speed, High-Reliability Erasing
Start
Program 0 to all bits
*
Address = 0
n = 0
Wait (10 ms)
Erase setup/erase command
n + 1
→
n
Erase-verify command
Wait (6
µ
s)
A 1
→
address
Verification?
Last address?
End
Fail
n = 3000?
No good
No
Yes
OK
Yes
No
Note:
*
Follow the high-speed, high-reliability flowchart in programming all bits.
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