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Block
Name
Address area
Size (byte)
Sector
Main memory area
Page 31
0x0800 7C00–0x0800 7FFF
1K
Main memory area
…
…
…
…
Main memory area
Page 60
0x0800 F000–0x0800 F3FF
1K
Fan 15
Main memory area
Page 61
0x0800 4000–0x0800 F7FF
1K
Main memory area
Page 62
0x0800 8000–0x0800 FBFF
1K
Main memory area
Page 63
0x0800 C000–0x0800 FFFF
1K
Information block
System memory area 0x1FFF EC00–0x1FFF F7FF
3K
-
Information block
Option byte
0x1FFF F800–0x1FFF F80F
16
-
Note: The number of pages in the main memory block of APM32F030x4x6x8 series products is related to
the Flash capacity of specific product.
Table 9 Flash Memory Structure of APM32F030xC Series Products
Block
Name
Address area
Size (byte)
Sector
Main memory area
Page 0
0x0800 0000–0x0800 07FF
2K
Sector 0
Main memory area
Page 1
0x0800 0800–0x0800 0FFF
2K
Main memory area
…
…
…
…
Main memory area
Page 62
0x0801 F000–0x0801 F7FF
2K
Fan 31
Main memory area
Page 63
0x0801 F800–0x0801 FFFF
2K
Main memory area
…
…
…
…
Main memory area
Page 126
0x0800 8000–0x0800 FBFF
2K
Fan 64
Main memory area
Page 127
0x0800 C000–0x0800 FFFF
2K
Information block
System memory area 0x1FFF D800–0x1FFF F7FF
8K
-
Information block
Option byte
0x1FFF F800–0x1FFF F80F
16
-
3.4
Functional Description
Describe the operation of main memory and information block (including system
memory area and option byte), including read, write, erase and read/write
protection.
Reading Flash includes main memory block and information block, while the
erase, write, read/write are introduced separately; the system memory area has
been written before the product leaves the factory and cannot be modified by the
user. The erase, write, and read/write protection of the module will not be
introduced.
Read Flash
Flash memory can be directly addressed, and reading Flash is affected by the
following configuration:
Wait cycle