154 Hitachi
7.5.6
Bank Active
The synchronous DRAM has a bank active function that enables it to support high-speed accesses
of the same row address. When the RASD bit of the MCR is set to 1, the read/write command
accesses using a command without an auto precharge (READ, WRIT). In this case, even when the
access is completed, no precharge is performed. When accessing the same row address in the same
bank, a READ or WRIT command can be called immediately without calling an ACTV command,
just like the RAS down mode of the DRAM’s high-speed page mode
.
The synchronous DRAM is
divided into two banks,
so one row address in each can stay active. When the next access is to a
different row address, a PRE command is called first to precharge the bank, and access is
performed following the order of the ACTV command and READ or WRIT command after the
precharge is completed. When accesses to different row addresses follow, the precharge is
performed after the access request occurs, so the access time becomes longer. When writing,
performing an auto precharge means that no command can be called for t
RWL
+ t
AP
cycles after a
WRITA command is called. When the bank active mode is used, READ or WRIT commands can
be issued consecutively if the row address is the same. This shortens the number of cycles by
t
RWL
+ t
AP
for each write. The number of cycles between the issue of the precharge command
and the row address strobe command is determined by the TRP bit of the MCR.
Whether execution is faster when the bank active mode is used or when a basic access is used is
determined by the proportion of accesses to the same row address (P1) and the average number of
cycles from the end of one access to the next access (t
A
). When tA is longer than t
AP
, the delay
waiting for the precharge during a read becomes invisible. If t
A
is longer than t
RWL
+ t
AP
, the
delay waiting for the precharge also becomes invisible during writes. The differences between the
bank active mode and basic access speeds in these cases are the number of cycles between the start
of access and the issue of the read/write command, or (t
RP
+ t
RCD
)
×
(1 – P1) and t
RCD
.
The time that a bank can be kept active t
RAS
is limited. When it is not assured that this period will
be provided by program execution and that another row address will be accessed without a hit to
the cache, the synchronous DRAM must be set to auto refresh and the refresh cycle must be set to
the maximum value t
RAS
or less. This enables the limit on the maximum active period for each
bank to be ensured. When auto refresh is not being used, some measure must be placed in the
program to ensure that the bank does not stay active for longer than the prescribed period.
Figure 7.19 shows a burst read cycle that is not an auto precharge, figure 7.20 shows a burst read
cycle to a same row address, figure 7.21 shows a burst read cycle to different row addresses, figure
7.22 shows a write cycle without auto precharge, figure 7.23 shows a write cycle to a same row
address, and figure 7.24 shows a write cycle to different row addresses.
In figure 7.20, a cycle that does nothing, Tnop, is inserted before the Tc cycle that issues the
READ command, synchronous DRAMs, however, have a 2 cycle latency during reads for the
DQMxx signals that specify bytes. If the Tc cycle is performed immediately without inserting a
Tnop cycle, the DQMxx signal for the Td1 cycle data output cannot be specified. This is why the
Summary of Contents for SH7095
Page 1: ...SH7095 Hardware User Manual ...
Page 23: ...12 Hitachi ...
Page 63: ...52 Hitachi ...
Page 77: ...66 Hitachi ...
Page 105: ...94 Hitachi Figure 5 14 Pipeline Operation when Interrupts are Enabled by Changing the SR ...
Page 127: ...116 Hitachi ...
Page 152: ...Hitachi 141 Figure 7 8 Example of 32 Bit Data Width SRAM Connection ...
Page 157: ...146 Hitachi Figure 7 13 Synchronous DRAM 32 bit Device Connection ...
Page 161: ...150 Hitachi Figure 7 15 Basic Burst Read Timing Auto Precharge ...
Page 167: ...156 Hitachi Figure 7 20 Burst Read Timing Bank Active Same Row Address ...
Page 168: ...Hitachi 157 Figure 7 21 Burst Read Timing Bank Active Different Row Addresses ...
Page 169: ...158 Hitachi Figure 7 22 Write Timing No Precharge ...
Page 170: ...Hitachi 159 Figure 7 23 Write Timing Bank Active Same Row Address ...
Page 180: ...Hitachi 169 Figure 7 29 Example of a DRAM Connection 32 Bit Data Width ...
Page 190: ...Hitachi 179 Figure 7 36 Example of Pseudo SRAM Connection 1 M pseudo SRAM ...
Page 191: ...180 Hitachi Figure 7 37 Example of Pseudo SRAM Connection 4 M pseudo SRAM ...
Page 209: ...198 Hitachi Figure 7 50 Master and Partial Share Master Connections ...
Page 231: ...220 Hitachi ...
Page 287: ...276 Hitachi ...
Page 307: ...296 Hitachi Note For a CPU writing H AA55 to FRC Figure 11 2 FRC Access Operation Write ...
Page 308: ...Hitachi 297 Note For an FRC reading from a CPU H AA55 Figure 11 3 FRC Access Operation Read ...
Page 333: ...322 Hitachi ...
Page 370: ...Hitachi 359 Figure 13 12 Sample Flowchart for Receiving Multiprocessor Serial Data ...
Page 371: ...360 Hitachi Figure 13 12 Sample Flowchart for Receiving Multiprocessor Serial Data cont ...
Page 395: ...384 Hitachi ...
Page 402: ...Hitachi 391 Figure 15 6 PLL Synchronization Settling Timing ...
Page 408: ...Hitachi 397 Figure 15 13 Bus Release Timing Slave Mode With PLL1 Off ...
Page 436: ...Hitachi 425 Figure 15 33 Synchronous DRAM Mode Register Write Cycle TRP 1 Cycle ...
Page 437: ...426 Hitachi Figure 15 34 Synchronous DRAM Mode Register Write Cycle TRP 2 Cycles ...
Page 449: ...438 Hitachi Figure 15 46 DRAM CAS Before RAS Refresh Cycle TRP 1 Cycle TRAS 2 Cycles PLL On ...
Page 454: ...Hitachi 443 Figure 15 51 DRAM CAS Before RAS Refresh Cycle TRP 1 Cycle TRAS 2 Cycles PLL Off ...
Page 461: ...450 Hitachi Figure 15 58 Pseudo SRAM Auto Refresh Cycle PLL On TRP 1 Cycle TRAS 2 Cycles ...
Page 462: ...Hitachi 451 Figure 15 59 Pseudo SRAM Self Refresh Cycle PLL On TRP 1 Cycle TRAS 2 Cycles ...
Page 467: ...456 Hitachi Figure 15 64 Pseudo SRAM Auto Refresh Cycle PLL Off TRP 1 Cycle TRAS 2 Cycles ...
Page 468: ...Hitachi 457 Figure 15 65 Pseudo SRAM Self Refresh Cycle PLL Off TRP 1 Cycle TRAS 2 Cycles ...
Page 471: ...460 Hitachi Figure 15 68 Interrupt Vector Fetch Cycle PLL On No Waits ...
Page 472: ...Hitachi 461 Figure 15 69 Interrupt Vector Fetch Cycle PLL Off No Waits ...
Page 473: ...462 Hitachi Figure 15 70 Interrupt Vector Fetch Cycle 1 External Wait Cycle ...
Page 474: ...Hitachi 463 Figure 15 71 Address Monitor Cycle ...
Page 490: ...Hitachi 479 B 2 Register Chart ...