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2UEA001270 Rev. F
ACS2000 User manual
Chapter 2 - Power electronics and cabinet features
Figure 2-4
AFE compartment
2.2.3.1 Phase module
The AFE consists of three identical phase modules, each housing the HV
IGBT (Insulated Gate Bipolar Transistor) semiconductors, phase
capacitors, gate drivers and the interface board for communication with
the circuit board of the AFE (AMC circuit board).
The high voltage IGBT is a power semiconductor switching device
specially developed for medium voltage drives. The device combines high
speed switching capabilities with high blocking voltage and low conduction
losses.
The phase modules can be removed from the cabinet for maintenance
and service.
Legend
1
L1 phase module of AFE
2
L2 phase module of AFE
3
L3 phase module of AFE
4
Extracted phase module
5
AFE compartment
6
Air plenum
Summary of Contents for ACS2000 DFE
Page 1: ...Medium Voltage Drives User Manual ACS2000 4 kV ...
Page 2: ......
Page 12: ...LOF 4 4 2UEA001270 Rev F ACS2000 User manual ...
Page 14: ...LOT 2 2 2UEA001270 Rev F ACS2000 User manual ...
Page 40: ...1 12 12 2UEA001270 Rev F ACS2000 User manual Chapter 1 Safety ...
Page 68: ...2 28 28 2UEA001270 Rev F ACS2000 User manual Chapter 2 Power electronics and cabinet features ...
Page 94: ...3 26 26 2UEA001270 Rev F ACS2000 User manual Chapter 3 Control system ...
Page 116: ...5 14 14 2UEA001270 Rev F ACS2000 User manual Chapter 5 Mechanical installation ...
Page 134: ...7 2 6 2UEA001270 Rev F ACS2000 User manual Chapter 7 Commissioning ...
Page 138: ...7 6 6 2UEA001270 Rev F ACS2000 User manual Chapter 7 Commissioning ...
Page 156: ...8 18 18 2UEA001270 Rev F ACS2000 User manual Chapter 8 Local operation ...
Page 213: ......