Zeiss AURIGA Compact Crossbeam, Инструкция по эксплуатации

Страница: 42 / 164

QO=çÑ=NSQ
fåëíêìÅíáçå=j~åì~ä=^ìêáÖ~=`çãé~Åí=ÉåMP
PK=aÉëÅêáéíáçå
mêáåÅáéäÉ=çÑ=çéÉê~íáçå
3.4.5.3. InlensDuo detector (optional)
The InlensDuo detector (1) allows simultaneous imaging and mixing of a high contrast topography
(SE) as well as clear compositional contrast (BSE). It is an annular shaped in-column detector that
is located in place of the In-lens detector.
Fig. 3.8: Schematics of the InlensDuo detector
The SEs and BSEs generated at the impact point of the primary electron beam are intercepted
by the low electrical field of the GEMINI
®
column. These electrons are accelerated by the field of
the electrostatic lens.
Filtering grid
Without switching on the filtering grid voltage, the InlensDuo detector has the same characteristics
as the In-lens SE detector, see section 3.4.5.1.
The InlensDuo detector primarly detects secondary electrons (SEs). By switching on the filtering
grid (2) voltage, the SEs will be rejected and only backscattered electrons (BSEs) will be detected.
Below a landing energy of 1.5 kV the filtering grid has the additional function of selecting the de-
sired energy of the BSEs. The operator can select the threshold energy of inelastically scattered
BSEs to enhance contrast and resolution.
1 InlensDuo detector 4 Objective lens
2 Filtering grid 5 Specimen
3 Beam path