Rev.6.00 Oct.28.2004 page 630
of 1016
REJ09B0138-0600H
19.16.4
Erase Block Registers 2 (EBR2)
Bit
:
7
6
5
4
3
2
1
0
EBR2
—
—
—
—
EB11
EB10
EB9
EB8
Initial value :
0
0
0
0
0
0
0
0
R/W
:
—
—
—
—
R/W
R/W
R/W
R/W
EBR2 is an 8-bit register that specifies the flash memory erase area block by block. EBR2 is initialized to H'00 by a reset,
in hardware standby mode and software standby mode, and the SWE bit in FLMCR1 is not set. When a bit in EBR2 is set,
the corresponding block can be erased. Other blocks are erase-protected. Set only one bit in EBR2 and EBR1 together
(setting more than one bit will automatically clear all EBR1 and EBR2 bits to 0). Bits 4 to 7 are reserved; they are always
read as 0 and cannot be modified. When on-chip flash memory is disabled, a read will return H'00, and writes are invalid.
The flash memory block configuration is shown in table 19-33.
Table 19-33 Flash Memory Erase Blocks
Block (Size)
Address
EB0 (4 kbytes)
H'000000 to H'000FFF
EB1 (4 kbytes)
H'001000 to H'001FFF
EB2 (4 kbytes)
H'002000 to H'002FFF
EB3 (4 kbytes)
H'003000 to H'003FFF
EB4 (4 kbytes)
H'004000 to H'004FFF
EB5 (4 kbytes)
H'005000 to H'005FFF
EB6 (4 kbytes)
H'006000 to H'006FFF
EB7 (4 kbytes)
H'007000 to H'007FFF
EB8 (32 kbytes)
H'008000 to H'00FFFF
EB9 (64 kbytes)
H'010000 to H'01FFFF
EB10 (64 kbytes)
H'020000 to H'02FFFF
EB11 (64 kbytes)
H'030000 to H'03FFFF
19.16.5
System Control Register 2 (SYSCR2)
Bit
:
7
6
5
4
3
2
1
0
—
—
—
—
FLSHE
—
—
—
Initial value :
0
0
0
0
0
0
0
0
R/W
:
—
—
—
—
R/W
—
—
—
SYSCR2 is an 8-bit readable/writable register that performs on-chip flash memory control.
SYSCR2 is initialized to H'00 by a reset and in hardware standby mode.
SYSCR2 can only be used in the F-ZTAT version. In the masked ROM version this register will return an undefined value
if read, and cannot be modified.
Bits 7 to 4—Reserved: These bits cannot be modified and are always read as 0.
Содержание ZTAT H8S/2357F
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