Rev.6.00 Oct.28.2004 page 116
of 1016
REJ09B0138-0600H
Bit 0—WAIT Pin Enable (WAITE): Selects enabling or disabling of wait input by the
WAIT
pin.
Bit 0
WAITE
Description
0
Wait input by
WAIT
pin disabled.
WAIT
pin can be used as I/O port.
(Initial value)
1
Wait input by
WAIT
pin enabled
6.2.6
Memory Control Register (MCR)
Bit
:
7
6
5
4
3
2
1
0
TPC
BE
RCDM
CW2
MXC1
MXC0
RLW1
RLW0
Initial value :
0
0
0
0
0
0
0
0
R/W
:
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
MCR is an 8-bit readable/writable register that selects the DRAM strobe control method, number of precharge cycles,
access mode, address multiplexing shift size, and the number of wait states inserted during refreshing, when areas 2 to 5
are designated as DRAM interface.
MCR is initialized to H'00 by a power-on reset and in hardware standby mode. It is not initialized by a manual reset* or in
software standby mode.
Note:
* Manual reset is only supported in the H8S/2357 ZTAT.
Bit 7—TP Cycle Control (TPC): Selects whether a 1-state or 2-state precharge cycle (T
P
) is to be used when areas 2 to 5
designated as DRAM space are accessed.
Bit 7
TPC
Description
0
1-state precharge cycle is inserted
(Initial value)
1
2-state precharge cycle is inserted
Bit 6—Burst Access Enable (BE): Selects enabling or disabling of burst access to areas 2 to 5 designated as DRAM
space. DRAM space burst access is performed in fast page mode.
Bit 6
BE
Description
0
Burst disabled (always full access)
(Initial value)
1
For DRAM space access, access in fast page mode
Bit 5—RAS Down Mode (RCDM): When areas 2 to 5 are designated as DRAM space and access to DRAM is
interrupted, RCDM selects whether the next DRAM access is waited for with the
RAS
signal held low (RAS down mode),
or the
RAS
signal is driven high again (RAS up mode).
Bit 5
RCDM
Description
0
DRAM interface: RAS up mode selected
(Initial value)
1
DRAM interface: RAS down mode selected
Содержание ZTAT H8S/2357F
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