Rev.6.00 Oct.28.2004 page 574
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REJ09B0138-0600H
19.6
Overview of Flash Memory (H8S/2357 F-ZTAT)
19.6.1
Features
The features of the flash memory are summarized below.
•
Four flash memory operating modes
Program mode
Erase mode
Program-verify mode
Erase-verify mode
•
Programming/erase methods
The flash memory is programmed 32 bytes at a time. Erasing is performed by block erase (in single-block units). When
erasing multiple blocks, the individual blocks must be erased sequentially. Block erasing can be performed as required
on 1-kbyte, 8-kbyte, 16-kbyte, 28-kbyte, and 32-kbyte blocks.
•
Programming/erase times (5 V version)
The flash memory programming time is 10 ms (typ.) for simultaneous 32-byte programming, equivalent to 300
µ
s
(typ.) per byte, and the erase time is 100 ms (typ.) per block.
•
Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
•
On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board
Boot mode
User program mode
•
Automatic bit rate adjustment
With data transfer in boot mode, the bit rate of the H8S/2357 Group chip can be automatically adjusted to match the
transfer bit rate of the host.
•
Flash memory emulation by RAM
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates in real time.
•
Protect modes
There are three protect modes, hardware, software, and error protect, which allow protected status to be designated for
flash memory program/erase/verify operations.
•
Programmer mode
Flash memory can be programmed/erased in programmer mode, using a PROM programmer, as well as in on-board
programming mode.
Содержание ZTAT H8S/2357F
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Страница 1047: ...H8S 2357 Group H8S 2357F ZTATTM H8S 2398F ZTATTM Hardware Manual 2 6 2 Ote machi Chiyoda ku Tokyo 100 0004 Japan...