Rev.6.00 Oct.28.2004 page 144
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REJ09B0138-0600H
6.5.10
Burst Operation
With DRAM, in addition to full access (normal access) in which data is accessed by outputting a row address for each
access, a fast page mode is also provided which can be used when making a number of consecutive accesses to the same
row address. This mode enables fast (burst) access of data by simply changing the column address after the row address
has been output. Burst access can be selected by setting the BE bit in MCR to 1.
Burst Access (Fast Page Mode) Operation Timing: Figure 6-20 shows the operation timing for burst access. When
there are consecutive access cycles for DRAM space, the
CAS
signal and column address output cycles (two states)
continue as long as the row address is the same for consecutive access cycles. The row address used for the comparison is
set with bits MXC1 and MXC0 in MCR.
T
p
ø
CSn
, (
RAS
)
Read
Write
CAS
,
LCAS
HWR
, (
WE
)
D
15
to D
0
HWR
, (
WE
)
D
15
to D
0
A
23
to A
0
T
r
T
c1
T
c2
Row
Column1
Column2
T
c1
T
c2
Note: n = 2 to 5
Figure 6-20 Operation Timing in Fast Page Mode
The bus cycle can also be extended in burst access by inserting wait states. The wait state insertion method and timing are
the same as for full access. For details, see section 6.5.8, Wait Control.
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