Rev.6.00 Oct.28.2004 page 725
of 1016
REJ09B0138-0600H
Item
Symbol Min
Typ
Max
Unit
Test
Condition
Programming Wait time after SWE bit clear
*
1
θ
100
—
—
µ
s
Maximum programming
count
*
1
*
4
N
—
—
1000
*
5
Times
Erase
Wait time after SWE bit
setting
*
1
x
1
—
—
µ
s
Wait time after ESU bit
setting
*
1
y
100
—
—
µ
s
Wait time after E bit setting
*
1
*
6
z
—
—
10
ms
Erase time
wait
Wait time after E bit clear
*
1
α
10
—
—
µ
s
Wait time after ESU bit clear
*
1
β
10
—
—
µ
s
Wait time after EV bit setting
*
1
γ
20
—
—
µ
s
Wait time after H’FF dummy
write
*
1
ε
2
—
—
µ
s
Wait time after EV bit clear
*
1
η
4
—
—
µ
s
Wait time after SWE bit clear
*
1
θ
100
—
—
µ
s
Maximum erase count
*
1
*
6
N
—
—
100
Times
Notes: 1. Settings of each time must comply with algorithm of writing/erasing.
2. Writing time for 128 bytes: indicates the total period in which bit P of flash memory control register 1 (FLMCR1)
is set. Writing verification time is not included.
3. Erasing time for one block: indicates the period in which bit E of FLMCR1 is set. Erasing verification time is not
included.
4. Maximum writing time: t
P
(max) =
Σ
wait time (z) after setting of bit P
5. The maximum writing count (N) must be set to the maximum writing time (t
P
(max)) or less according the actual
set value (z). Wait time (z) must be switched after setting of bit P according to writing count (n).
Writing count n
1
≤
n
≤
6
z = 30
µ
s
7
≤
n
≤
1000
z = 200
µ
s
[In additional writing]
Writing count n
1
≤
n
≤
6
z = 10
µ
s
6. Wait time (z) after setting of bit E and the maximum erasing count (N) have the following relationship to the
maximum erasing time (t
E
(max)).
t
E
(max) = wait time (z) after setting of bit E
×
maximum erasing count (N)
Содержание ZTAT H8S/2357F
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Страница 1047: ...H8S 2357 Group H8S 2357F ZTATTM H8S 2398F ZTATTM Hardware Manual 2 6 2 Ote machi Chiyoda ku Tokyo 100 0004 Japan...