CHAPTER 22 ELECTRICAL SPECIFICATIONS (TARGET)
Preliminary User’s Manual U19014EJ1V0UD
501
Flash Memory Programming Characteristics
(T
A
=
−
40 to +85
°
C, 4.0 V
≤
V
DD
= EV
DD
≤
5.5 V, V
SS
= EV
SS
= 0 V)
z
Basic characteristics
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
DD
supply current
I
DD
f
XP
= 17.6 MHz (MAX.)
4.5
11.0
mA
All block
T
eraca
10 200 ms
Erase time
Notes 1, 2
Block unit
T
erasa
10 200 ms
Write time (in 8-bit units)
Note 1
T
wrwa
10 100
µ
s
Number of rewrites per chip
C
erwr
Retention: 15 years
1 erase + 1 write after erase = 1 rewrite
Note 3
100 Times
Notes 1.
These are characteristics of the flash memory. These characteristic are not the rewrite time by a
dedicated flash programmer (PG-FP4) or by self programming.
2.
The prewrite time before erasure and the erase verify time (writeback time) are not included.
3.
When a product is first written after shipment, “erase
→
write” and “write only” are both taken as one
rewrite.
Remarks 1.
f
XP
: Main system clock oscillation frequency
2.
For serial write operation characteristics, refer to
78K0/Kx2 Flash Memory Programming
(Programmer) Application Note (U17739E)
.
electronic components distributor