Appendix G NVM Electrical Parameters
S12ZVHY/S12ZVHL Family Reference Manual Rev. 1.05
804
Freescale Semiconductor
G.2
NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
NOTE
All values shown in
are preliminary and subject to further
characterization.
19
Program EEPROM (3 Word)
204
3663
t
DPGM_3
0.31
0.32
0.66
14.91
ms
20
Program EEPROM (4 Word)
272
4666
t
DPGM_4
0.40
0.42
0.86
19.00
ms
21
Erase EEPROM Sector
5015
810
t
DERSPG
4.80
5.04
20.49
38.85
ms
22
Protection Override
0
475
t
PRTOVRD
14.84
14.84
14.84
475.00
us
1. Minimum times are based on maximum f
NVMOP
and maximum f
NVMBUS
2. Typical times are based on typical f
NVMOP
and typical f
NVMBUS
3. Maximum times are based on typical f
NVMOP
and typical f
NVMBUS
plus aging
4. Worst times are based on minimum f
NVMOP
and minimum f
NVMBUS
plus aging
5. Affected by Pflash size
6. Affected by EEPROM size
Table G-2. NVM Reliability Characteristics
NUM C
Rating
Symbol
Min
Typ
Max
Unit
Program Flash Arrays
1
C Data retention at an average junction temperature of T
Javg
= 85
C
(1)
after up to 10,000 program/erase cycles
1. T
Javg
does not exceed 85
C in a typical temperature profile over the lifetime of a consumer, industrial or automotive application.
t
NVMRET
20
100
(2)
—
Years
2
C Program Flash number of program/erase cycles
(-40
C
tj
150
C
n
FLPE
10K
100K
(3)
—
Cycles
EEPROM Array
3
C Data retention at an average junction temperature of T
Javg
= 85
after up to 100,000 program/erase cycles
t
NVMRET
5
100
—
Years
4
C Data retention at an average junction temperature of T
Javg
= 85
after up to 10,000 program/erase cycles
t
NVMRET
10
100
—
Years
5
C Data retention at an average junction temperature of T
Javg
= 85
after less than 100 program/erase cycles
t
NVMRET
20
100
—
Years
6
C EEPROM number of program/erase cycles (-40
C
tj
150
C
n
FLPE
100K
500K
—
Cycles
Table G-1. NVM Timing Characteristics (32 MHz - 64KB PFlash - 2KB EEPROM)
Num
Command
f
NVMOP
cycle
f
NVMBUS
cycle
Symbol
Min
(1)
Typ
(2)
Max
(3)
Worst
(4)
Unit
Содержание MC9S12ZVHL32
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Страница 774: ...Chapter 23 LIN Physical Layer S12LINPHYV2 S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 774 Freescale Semiconductor...
Страница 788: ...Appendix A MCU Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 788 Freescale Semiconductor...
Страница 794: ...Appendix B ADC Electricals S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 794 Freescale Semiconductor...
Страница 798: ...Appendix D IRC Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 798 Freescale Semiconductor...
Страница 802: ...Appendix F MSCAN Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 802 Freescale Semiconductor...
Страница 806: ...Appendix G NVM Electrical Parameters S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 806 Freescale Semiconductor...
Страница 810: ...Appendix H BATS Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 810 Freescale Semiconductor...
Страница 816: ...Appendix K OSC32K Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 816 Freescale Semiconductor...
Страница 822: ...Appendix L SPI Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 822 Freescale Semiconductor...
Страница 826: ...Appendix M LINPHY Electrical Specifications S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 826 Freescale Semiconductor...
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Страница 832: ...Appendix O Package Information S12ZVHY S12ZVHL Family Reference Manual Rev 1 05 Freescale Semiconductor 833 O 2 100 LQFP...
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