Freescale Semiconductor MC9S12ZVHL32, Справочное руководство

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Appendix M LINPHY Electrical Specifications
S12ZVHY/S12ZVHL Family Reference Manual Rev. 1.05
Freescale Semiconductor 823
Appendix M
LINPHY Electrical Specifications
M.1 Maximum Ratings
Table M-1. Maximum ratings of the LINPHY
M.2 Static Electrical Characteristics
Table M-2. Static electrical characteristics of the LINPHY
Num C Ratings Symbol Value Unit
1 P DC voltage on LIN V
LIN
-32 to +42 V
2 D Continuous current on LIN I
LIN
± 200
(1)
1. The current on the LIN pin is internally limited. Therefore, it should not be possible to reach the 200mA anyway.
mA
Characteristics noted under conditions 7V <= V
LINSUP
<= 18V unless otherwise noted
(1) (2)
. Typical values noted reflect the
approximate parameter mean at T
A
= 25°C under nominal conditions unless otherwise noted.
Num C Ratings Symbol Min Typ Max Unit
1 C V
LINSUP
range V
LINSUP_LIN
7
1
12 18 V
2 M Current limitation into the LIN pin in dominant state
(3)
V
LIN
= V
LINSUP_LIN_MAX
I
LIN_LIM
40 200 mA
3 M Input leakage current in dominant state, driver off,
internal pull-up on
V
LIN
= 0V, V
LINSUP
= 12V
I
LIN_PAS_dom
-1 mA
4 M Input leakage current in recessive state, driver off
8V<V
LINSUP
<18V, 8V<V
LIN
<18V, V
LIN
> V
LINSUP
I
LIN_PAS_rec
20

A
5 T Input leakage current when ground disconnected
GND
Device
= V
LINSUP
, 0V<V
LIN
<18V, V
LINSUP
= 12V
I
LIN_NO_GND
-1 1 mA
6 T Input leakage current when battery disconnected
V
LINSUP
= GND
Device
, 0<V
LIN
<18V
I
LIN_NO_BAT
30

A
7 M Receiver dominant state V
LINdom
0.4 V
LINSUP
8 M Receiver recessive state V
LINrec
0.6 V
LINSUP
9 M V
LIN_CNT
=(V
th_dom
+ V
th_rec
)/2 V
LIN_CNT
0.475 0.5 0.525 V
LINSUP
10 M V
HYS
= V
th_rec
-V
th_dom
V
HYS
0.175 V
LINSUP
11 - Maximum capacitance allowed on slave node including
external components C
slave
220 250 pF
12a T Capacitance of the LIN pin,
Recessive state C
LIN
20 pF