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User’s Manual U16580EE3V1UD00
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VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
CMOS device stays in the area between V
IL
(MAX) and V
IH
(MIN) due to noise, etc., the device may
malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed,
and also in the transition period when the input level passes through the area between V
IL
(MAX) and
V
IH
(MIN).
HANDLING OF UNUSED INPUT PINS
Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is
possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to V
DD
or GND
via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must
be judged separately for each device and according to related specifications governing the device.
PRECAUTION AGAINST ESD
A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it when it has occurred. Environmental control must be
adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that
easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work
benches and floors should be grounded. The operator should be grounded using a wrist strap.
Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for
PW boards with mounted semiconductor devices.
STATUS BEFORE INITIALIZATION
Power-on does not necessarily define the initial status of a MOS device. Immediately after the power
source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does
not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the
reset signal is received. A reset operation must be executed immediately after power-on for devices
with reset functions.
INPUT OF SIGNAL DURING POWER OFF STATE
Do not input signals or an I/O pull-up power supply while the device is not powered. The current
injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and
the abnormal current that passes in the device at this time may cause degradation of internal elements.
Input of signals during the power off state must be judged separately for each device and according to
related specifications governing the device.
NOTES FOR CMOS DEVICES
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All (other) product, brand, or trade names used in this pamphlet are the trademarks or
registered trademarks of their respective owners.
Product specifications are subject to change without notice. To ensure that you have
the latest product data, please contact your local NEC Electronics sales office.
Summary of Contents for MuPD70F3187
Page 6: ...6 Preface User s Manual U16580EE3V1UD00 ...
Page 16: ...16 User s Manual U16580EE3V1UD00 ...
Page 28: ...28 User s Manual U16580EE3V1UD00 ...
Page 32: ...32 User s Manual U16580EE3V1UD00 ...
Page 84: ...84 Chapter 2 Pin Functions User s Manual U16580EE3V1UD00 MEMO ...
Page 144: ...144 Chapter 3 CPU Functions User s Manual U16580EE3V1UD00 MEMO ...
Page 312: ...312 Chapter 9 16 Bit Timer Event Counter P User s Manual U16580EE3V1UD00 MEMO ...
Page 534: ...534 Chapter 11 16 bit Timer Event Counter T User s Manual U16580EE3V1UD00 ...
Page 969: ...969 Chapter 20 Port Functions User s Manual U16580EE3V1UD00 MEMO ...
Page 970: ...970 Chapter 20 Port Functions User s Manual U16580EE3V1UD00 ...
Page 976: ...976 Chapter 22 Internal RAM Parity Check Function User s Manual U16580EE3V1UD00 MEMO ...
Page 984: ...984 Chapter 23 On Chip Debug Function OCD User s Manual U16580EE3V1UD00 MEMO ...
Page 1006: ...1006 Chapter 24 Flash Memory User s Manual U16580EE3V1UD00 MEMO ...
Page 1036: ...1036 Chapter 27 Recommended Soldering Conditions User s Manual U16580EE3V1UD00 MEMO ...
Page 1046: ...1046 Appendix A Index User s Manual U16580EE3V1UD00 MEMO ...
Page 1052: ...1052 User s Manual U16580EE3V1UD00 ...
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