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MOTOROLA
Chapter 33. Electrical Characteristics
33-9
Flash Memory Characteristics
33.6 Flash Memory Characteristics
The Flash memory characteristics are shown in Table 33-8 and Table 33-9.
Table 33-7. QADC Conversion Specifications (Operating)
(V
DDH
and V
DDA
= 5.0 V
dc
±
0.5V, V
DD
= 2.7-3.6V
,
V
SS
and V
SSA
= 0 V
dc
, V
RH
– V
RL
= 5 V
dc
± 0.5V, T
A
within operating
temperature range, f
sys
= 16 MHz)
Num
Parameter
Symbol
Min
Max
Unit
1
QADC Clock (QCLK) Frequency
1
1
Conversion characteristics vary with F
QCLK
rate. Reduced conversion accuracy occurs at max F
QCLK
rate. Using the
QADC pins as GPIO functions during conversions may result in degraded results. Best QADC conversion accuracy is
achieved at a frequency of 2 MHz.
F
QCLK
0.5
2.1
MHz
2
Conversion Cycles
CC
14
28
QCLK
cycles
3
Conversion Time
F
QCLK
= 2.0 MHz
1
Min = CCW/IST =%00
Max = CCW/IST =%11
T
CONV
7.0
14.0
µ
s
4
Stop Mode Recovery Time
T
SR
—
10
µ
s
5
Resolution
2
2
At V
RH
– V
RL
= 5.12 V, one count = 5 mV
—
5
—
mV
6
Absolute (total unadjusted) error
3, 4, 5
F
QCLK
= 2.0 MHz
2
, 2 clock input sample time
3
Accuracy tested and guaranteed at V
RH
– V
RL
= 5.0V ± 0.5V
4
Current Coupling Ratio, K, is defined as the ratio of the output current, I
out
, measured on the pin under test to the
injection current, I
inj
, when both adjacent pins are overstressed with the specified injection current. K = I
out
/I
inj
. The
input voltage error on the channel under test is calculated as Verr = I
inj
*
K
*
R
S
.
5
Performance expected with production silicon.
AE
-2
2
Counts
7
Absolute (total unadjusted) error
3, 4, 5
F
QCLK
= 2.0 MHz
2
, 2 clock input sample time
—
-3
3
Counts
Table 33-8. SGFM Flash Program and Erase Characteristics
(V
DDF
= 2.7 to 3.6 V, T
A
= T
L
to T
H
)
1
1
T
L
is defined to be –40°C and T
H
is defined to be 85°C
Parameter
Symbol
Min
Typ
Max
Unit
System clock (read only)
f
sys(R)
0
—
80
MHz
System clock (program/erase)
2
2
Refer to the Flash section for more information
f
sys(P/E)
0.15
—
80
MHz
Summary of Contents for ColdFire MCF5281
Page 124: ...3 20 MCF5282 User s Manual MOTOROLA EMAC Instruction Set Summary ...
Page 141: ...MOTOROLA Chapter 5 Static RAM SRAM 5 5 SRAM Programming Model ...
Page 142: ...5 6 MCF5282 User s Manual MOTOROLA SRAM Programming Model ...
Page 168: ...6 26 MCF5282 User s Manual MOTOROLA Interrupts ...
Page 186: ...7 18 MCF5282 User s Manual MOTOROLA Functional Description ...
Page 228: ...9 22 MCF5282 User s Manual MOTOROLA Functional Description ...
Page 246: ...10 18 MCF5282 User s Manual MOTOROLA Low Power Wakeup Operation ...
Page 254: ...11 8 MCF5282 User s Manual MOTOROLA Memory Map and Registers ...
Page 264: ...12 10 MCF5282 User s Manual MOTOROLA Chip Select Registers ...
Page 280: ...13 16 MCF5282 User s Manual MOTOROLA Misaligned Operands ...
Page 314: ...14 34 MCF5282 User s Manual MOTOROLA MCF5282 External Signals ...
Page 339: ...MOTOROLA Chapter 15 Synchronous DRAM Controller Module 15 25 SDRAM Example ...
Page 340: ...15 26 MCF5282 User s Manual MOTOROLA SDRAM Example ...
Page 356: ...16 16 MCF5282 User s Manual MOTOROLA DMA Controller Module Functional Description ...
Page 408: ...17 52 MCF5282 User s Manual MOTOROLA Buffer Descriptors ...
Page 446: ...20 24 MCF5282 User s Manual MOTOROLA Interrupts ...
Page 474: ...22 18 MCF5282 User s Manual MOTOROLA Programming Model ...
Page 510: ...23 36 MCF5282 User s Manual MOTOROLA Operation ...
Page 526: ...24 16 MCF5282 User s Manual MOTOROLA I2C Programming Examples ...
Page 672: ...28 12 MCF5282 User s Manual MOTOROLA Functional Description ...
Page 718: ...29 46 MCF5282 User s Manual MOTOROLA Motorola Recommended BDM Pinout ...
Page 750: ...32 8 MCF5282 User s Manual MOTOROLA Ordering Information ...