Rev. 1.0, 09/01, page 226 of 904
T
p
Address bus
Idle cycle
Data bus
T
r
T
c1
T
c2
T
3
T
c1
Continuous synchronous
DRAM space write
External address space read
Synchronous
DRAM space read
T
2
T
i
T
1
,
CKE
High
PALL
ACTV
NOP WRIT
NOP
NOP
READ
DQMU, DQML
T
Cl
T
c2
Precharge-sel
ø
External address
External address
Column
address
Column address 2
Row
address
Row
address
Column
address
Figure 6.80 Example of Idle Cycle Operation after Continuous Synchronous DRAM Space
Write Access (IDLC = 0, ICIS1 = 0, SDWCD = 1, CAS Latency 2)
Table 6.11 shows whether there is an idle cycle insertion or not in the case of mixed accesses to
normal space and DRAM space/continuous synchronous DRAM space.
Summary of Contents for H8S/2376 F-ZTAT
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