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T
p
ø
SDRAM
ø
Read
CKE
PALL
ACTV
READ
READ
NOP
NOP
DQMU, DQML
Data bus
Address bus
T
r
T
c1
T
cl
T
c2
T
c1
T
cl
T
c2
Row address
Column
address 1
Column address
Column address 2
Precharge-sel
Row address
High
Write
CKE
PALL
ACTV
NOP
NOP
NOP
WRIT
WRIT
DQMU, DQML
Data bus
High
Figure 6.52 Operation Timing of Burst Access
(BE = 1, SDWCD = 0, CAS Latency 2)
RAS Down Mode: Even when burst operation is selected, it may happen that access to continuous
synchronous DRAM space is not continuous, but is interrupted by access to another space. In this
case, if the row address active state is held during the access to the other space, the read or write
command can be issued without ACTV command generation similarly to DRAM RAS down
mode.
To select RAS down mode, set the BE bit to 1 in DRAMCR regardless of the RCDM bit settings.
The operation corresponding to DRAM RAS up mode is not supported by this LSI.
Figure 6.53 shows an example of the timing in RAS down mode.
Summary of Contents for H8S/2376 F-ZTAT
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