Rev. 3.0, 10/02, page 672 of 686
24.7
D/A Conversion Characteristics
Table 24.10 lists the D/A conversion characteristics.
Table 24.10 D/A Conversion Characteristics
Conditions: V
CC
= PLL V
CC
=Dr V
CC
=2.7 V to 3.6 V, Vref=2.7 V to AV
CC
, V
SS
= PLLAV
SS
=
Dr V
SS
=AV
SS
= 0 V,
φ
=13 MHz to 16 MHz,
T
a
= –20°C to +75°C (regular specifications), T
a
= –40°C to +85°C (wide-range
specifications)
Item
Min
Typ
Max
Unit
Test Condition
Resolution
8
8
8
bits
Conversion time
—
—
10
µs
Load capacitance = 20 pF
—
±2.0
±3.0
LSB
Load capacitance = 2 M
Ω
Absolute accuracy
—
—
±2.0
LSB
Load capacitance = 4 M
Ω
24.8
Flash Memory Characteristics
Table 24.11 Flash Memory Characteristics
Conditions: V
CC
= PLLV
CC
=DrV
CC
= 3.0 V to 3.6 V, AV
CC
= 2.7 V to 3.6 V, Vref = 2.7 V to
AV
CC
, V
SS
= PLLV
SS
= DrV
SS
= AV
SS
= 0 V,
T
a
= –20 to +75°C (Programming / erasing operating temperature range)
Item
Symbol
Min
Typ
Max
Unit
Programming time
*
1
*
2,
*
4
t
P
—
10
200
ms/128 bytes
Erase time
*
1,
*
3,
*
5
t
E
—
50
1000
ms/block
Reprogramming count
N
WEC
100
*
6
10,000
*
7
100
Times
Data retention time
*
8
t
DRP
10
—
—
Years
Programming
Wait time after PSU1 bit setting
*
1
y
50
50
—
µs
Wait time after P1 bit setting
*
1
*
4
z0
28
30
32
µs
z1
198
200
202
µs
z2
8
10
12
µs
Wait time after P1 bit clear
*
1
α
5
5
—
µs
Wait time after PSU1 bit clear
*
1
β
5
5
—
µs
Wait time after PV1 bit setting
*
1
γ
4
4
—
µs
Wait time after H’FF dummy write
*
1
ε
2
2
—
µs
Wait time after PV1 bit clear
*
1
η
2
2
—
µs
Maximum programming count
*
1
*
4
N1
—
—
6
*
4
Times
N2
—
—
994
*
4
Times
Summary of Contents for H8S/2215 Series
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