Hitachi H8S/2215 Series, Hardware Manual

Page: 26 / 745

Rev. 3.0, 10/02, page xxvi of lviii
Section
Page
Description
24.3 DC Characteristics
Table 24.2 DC
Characteristics
651 Table amended
Item Symbol Min Typ Max Unit
Test
Conditions
Schmitt
IRQ0
to
IRQ5
V
T
–
V
CC
×
0.2 — — V
trigger input
IRQ7
V
T
+
— — V
CC
⋅
0.8 V
voltage
V
T
+
– V
T
–
V
CC
×
0.05 — — V
Input high
voltage
RES
,
STBY
,
NMI,
MD2 to MD0,
TRST
, TCK,
TMS, TDI,
VBUS,
UBPM ,
FWE *
5
V
IH
V
CC
×
0.9 — V
CC
+ 0.3 V
EXTAL,
EXTAL48,
Ports 1, 3, 7,
and A to G V
CC
×
×
0.8 — V
CC
+ 0.3 V
Ports 4 and 9 V
CC
0.8 — AV
CC
+ 0.3 V
24.4.4 Timing of On-Chip
Supporting Modules
Figure 24.21 Boundary
Scan TCK Input Timing
668 Figure amended
t
TCKL
t
TCKH
t
tcyc
TCK
24.8 Flash Memory
Characteristics
Table 24.11 Flash Memory
Characteristics
672
673
Table amended
Item Symbol Min Typ Max Unit
Programming time *
1
*
2,
*
4
t
P
— 10 200 ms/128 bytes
Erase time *
1,
*
3,
*
5
*
6
*
7
*
8
t
E
— 50 1000 ms/block
Reprogramming count N
WEC
100 10,000 100 Times
Data retention time
t
DRP
10 — — Year
Notes added
*
6 Minimum number of times for which all characteristics are
guaranteed after rewriting. (Guarantee range is 1 to
minimum value.)
* 7 Reference value for 25°C (as a guideline, rewriting should
normally function up to this value).
*
8 Data retention characteristic when rewriting is performed
within the specification range, including the minimum value.
B. Product Model Lineup 679
Linup added
Product Class
Product Type
Name
Marking Package (code)
H8S/2215 Flash memory
Version HD64F2215 HD64F2215TE 120 pin TQFP (TFP-120)
HD64F2215BR 112 pin P-LFBGA (BP-112)
HD64F2215UTE 120 pin TQFP(TEP-120) HD64F2215U
HD64F2215UBR 112 pin P-LFBGA(BP-112)
Masked ROM
Version HD6432215A HD6432215A( *** )TE 120 pin TQFP (TFP-120)
HD6432215A( *** )BR 112 pin P-LFBGA (BP-112)
HD6432215B HD6432215B( *** )TE 120 pin TQFP (TFP-120)
HD6432215B(
***
)BR 112 pin P-LFBGA (BP-112)
HD6432215C HD6432215C(
***
)TE 120 pin TQFP (TFP-120)
HD6432215C(
***
)BR 112 pin P-LFBGA (BP-112)