Preliminary User’s Manual U16846EJ1V0UD
333
CHAPTER 21 FLASH MEMORY
The
µ
PD78F0101H, 78F0102H, and 78F0103H replace the
µ
PD780101, 780102, and 780103 of the 78K0/KB1
with flash memory to which a program can be written, erased, and overwritten while mounted on the board. Table 21-
1 lists the differences between the 78K0/KB1+ and the 78K0/KB1.
Table 21-1. Differences Between 78K0/KB1+ and 78K0/KB1
78K0/KB1+ 78K0/KB1
Item
µ
PD78F0101H, 78F0102H,
78F0103H
µ
PD78F0103
µ
PD780101, 780102,
780103
Internal ROM
configuration
Flash memory
(single power supply)
Flash memory
(two power supplies)
Mask ROM
Internal ROM capacity
µ
PD78F0101H: 8 KB
µ
PD78F0102H: 16 KB
µ
PD78F0103H: 24 KB
µ
PD78F0103: 24 KB
Note
µ
PD780101: 8 KB
µ
PD780102: 16 KB
µ
PD780103: 24 KB
Internal expansion RAM
capacity
µ
PD78F0101H: 512 bytes
µ
PD78F0102H: 768 bytes
µ
PD78F0103H: 768 bytes
µ
PD78F0103: 768 bytes
Note
µ
PD780101: 512 bytes
µ
PD780102: 768 bytes
µ
PD780103: 768 bytes
Pin 5
FLMD0 pin
V
PP
pin
IC pin
Pin 22
P17/TI50/TO50/FLMD1 pin
P17/TI50/TO50 pin
Power-on clear (POC)
circuit
Detection voltage is fixed
(V
POC
= 2.1 V
±
0.1 V)
Enabling use of POC and
detection voltage selectable
by product
Enabling use of POC and
detection voltage selectable
by mask option
Self-programming function Available
None
−
Electrical specifications
Refer to the electrical specifications chapter in the user’s manual of each product.
Note The same capacity as the mask ROM versions can be specified by means of the internal memory size
switching register (IMS).
Caution There are differences in noise immunity and noise radiation between the flash memory and
mask ROM versions. When pre-producing an application set with the flash memory version
and then mass-producing it with the mask ROM version, be sure to conduct sufficient
evaluations for the commercial samples (not engineering samples) of the mask ROM versions.