664
H8/3039F
H8/3022F
Flash memory RAM emulation
register
configuration
RAMCR
I/O address: H'FF47
7
—
6
—
5
—
4
—
3
RAMS
2
RAM2
1
RAM1
0
—
RAMER
I/O address: H'FF47
7
—
6
—
5
—
4
—
3
RAMS
2
RAM2
1
RAM1
0
RAM0
RAM
emulation
RAM area
1 kbytes
(H'FF800 to H'FFBFF)
4 kbytes
(H'FE000 to H'FEFFF)
Applicable
blocks
EB0 to EB3
EB0 to EB7
Flash memory
programming
modes
Boot mode bit
rate
9,600 bps, 4,800 bps
19,200 bps, 9,600 bps,
4,800bps
PROM mode
Use of PROM programmer
supporting Hitachi micro-
computer device type with 128-
kbyte on-chip flash memory
(FZTAT128)
Use of PROM programmer
supporting Hitachi micro-
computer device type with 256-
kbyte on-chip flash memory
(FZTAT256)
Oscillation stabilization wait
time (with external clock)
Arbitrary setting
Wait time setting of 0.1 ms or
more
Electrical
characteristics
Operating
temperature
–20
°
C to +75
°
C
–40
°
C to +85
°
C
–20
°
C to +75
°
C
Standby
current
Ta
≤
50
°
C: 5
µ
A
Ta
>
50
°
C: 20
µ
A
Ta
≤
50
°
C: 10
µ
A
Ta
>
50
°
C: 80
µ
A