MT6M15962a
2.3 IGBT drive function
Figure 3-2 shows a block diagram of the Pre-Driver. The IPM has a built-in gate driving circuit for the
IGBT and it is possible to drive the IGBT by providing an opto-isolated control signal to the IPM without
designing a gate driving circuit.
The features of this drive function are introduced below:
Independent turn-on and turn-off control
The IPM has independent gate driving circuits for turn-on and turn-off. Therefore, the driving circuits
control the dv/dt of turn-on and turn-off independently and maximize the performance of the device.
Soft shutdown
The gate voltage is gradually reduced when the IGBT is turned-off by the protection function in
various kinds of abnormal modes. This soft shutdown suppresses the surge voltage during turn-off
and prevents the IPM from being destroyed.
Prevention of false turn-on
The gate terminal of the IGBT is connected to the grounded emitter with low impedance. It prevents
false turn-on of the IGBT due to
V
GE
rising resulting from noise or other cause.
No reverse bias power supply is necessary
Since the wiring length between the control IC and the IGBT in the IPM are short, the wiring
impedance is small. Therefore, the IPM can be driven without reverse bias.
© Fuji Electric Co., Ltd. All rights reserved.
3-4
OC
IN
PGND
OH
VCC
OUT
VCC
ALM
VCC
ﾛｼﾞｯｸ回路
VCC
VCC
VCC
SGND
OC
IN
PGND
OH
VCC
OUT
VCC
ALM
VCC
ﾛｼﾞｯｸ回路
VCC
VCC
VCC
SGND
Fig.3-2 Pre-Driver block diagram (Example:7MBP250XDA065-50)
