22 ELECTRICAL CHARACTERISTICS
22-8
Seiko Epson Corporation
S1C31D50/D51 TECHNICAL MANUAL
(Rev. 2.00)
22.6 Flash Memory Characteristics
Unless otherwise specified: V
DD
= 2.4 to 5.5 V, V
SS
= 0 V, Ta = -40 to 85
°
C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Programming count
*
1
C
FEP
Programmed data is guaranteed to be retained for
10 years.
1,000
–
–
times
*
1 Assumed that E Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
22.7 Input/Output Port (PPORT) Characteristics
Unless otherwise specified: V
DD
= 1.8 to 5.5 V, V
SS
= 0 V, Ta = -40 to 85
°
C
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
High level Schmitt input threshold
voltage
V
T+
0.5
×
V
DD
–
0.8
×
V
DD
V
Low level Schmitt input threshold
voltage
V
T-
0.2
×
V
DD
–
0.5
×
V
DD
V
Schmitt input hysteresis voltage
D
V
T
180
–
–
mV
High level output current
I
OH
V
OH
= 0.9
×
V
DD
–
–
-0.5
mA
Low level output current
I
OL
V
OL
= 0.1
×
V
DD
0.5
–
–
mA
Leakage current
I
LEAK
-150
–
150
nA
Input pull-up resistance
R
INU
100
200
500
k
W
Input pull-down resistance
R
IND
100
200
500
k
W
Pin capacitance
C
IN
–
–
15
pF
High level
Low level
V
T
+
V
T
-
0
Input voltage [V]
Input data
V
DD