Model 8010 High Power Device Test Fixture User's Manual Section 4: Off-state MOSFET characterization of a power MOSFET
8010-900-01 Rev. C / March 2017
4-11
Idss measurement
This example:
•
Performs the I
dss
measurement, where the drain-to-source voltage (V
ds
) is swept and leakage
current measurements are made while the FET is in the off-state.
•
Monitors the current measurement to see if the current limit has been reached. When the current
limit has been reached, the voltage sweep is aborted.
With this method, a second System SourceMeter is used to apply a voltage from gate to source (V
gs
).
This example uses a TSP script to perform the measurement. The script includes two separate
functions for configuring the System SourceMeter Instruments and returning current and voltage
readings from the reading buffer.