ESMT
M12L64164A
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2008
Revision: 3.3
11/46
BURST SEQUENCE (BURST LENGTH = 4)
Initial Adrress
A1 A0
Sequential Interleave
0 0 0 1 2 3 0 1 2 3
0 1 1 2 3 0 1 0 3 2
1 0 2 3 0 1 2 3 0 1
1 1 3 0 1 2 3 2 1 0
BURST SEQUENCE (BURST LENGTH = 8)
Initial
A2 A1 A0
Sequential Interleave
0
0
0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
0
0
1 1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6
0
1
0 2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5
0
1
1 3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4
1
0
0 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3
1
0
1 5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2
1
1
0 6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1
1
1
1 7 0 1 2 3 4 5 6 7 6 5 4 3 2 1 0