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ESMT
M12L64164A
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2008
Revision: 3.3
5/46
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
VALUE
UNIT
Voltage on any pin relative to V
SS
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to V
SS
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
C
°
Power dissipation
P
D
1
W
Short circuit current
I
OS
50
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 C
°
)
PARAMETER SYMBOL
MIN
TYP MAX
UNIT
NOTE
Supply voltage
V
DD
, V
DDQ
3.0 3.3
3.6
V
Input logic high voltage
V
IH
2.0 V
DD
+0.3 V
1
Input logic low voltage
V
IL
-0.3 0 0.8 V 2
Output logic high voltage
V
OH
2.4 -
- V
I
OH
= -2mA
Output logic low voltage
V
OL
- - 0.4 V
I
OL
= 2mA
Input leakage current
I
IL
-5 - 5
μ
A
3
Output leakage current
I
OL
-5 - 5
μ
A
4
Note:
1. V
IH(max)
= 4.6V AC for pulse width
≤
10ns acceptable.
2.
V
IL(min)
= -1.5V AC for pulse width
≤
10ns acceptable.
3. Any input 0V
≤
V
IN
≤
V
DD
+ 0.3V, all other pins are not under test = 0V.
4.
D
out
is disabled , 0V
≤
V
OUT
≤
V
DD
.
CAPACITANCE
(VDD = 3.3V, TA = 25 C
°
, f = 1MHZ)
PARAMETER SYMBOL
MIN
MAX
UNIT
Input capacitance (A0 ~ A11, BA0 ~ BA1)
C
IN1
2 4 pF
Input capacitance
(CLK, CKE, CS , RAS , CAS , WE &
L(U)DQM)
C
IN2
2 4 pF
Data input/output capacitance (DQ0 ~ DQ15)
C
OUT
2 6 pF