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ESMT
M12L64164A
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2008
Revision: 3.3
6/46
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted
,
TA = 0 to 70
C
°
VERSION
PARAMETER
SYMBOL
TEST CONDITION
-5 -6 -7
UNIT
NOTE
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1, t
RC
≥
t
RC(min)
, I
OL
= 0 mA,
tcc = tcc(min)
100 85 85 mA
1,2
I
CC2P
CKE
≤
V
IL(max)
, tcc = tcc(min)
2
Precharge Standby Current
in power-down mode
I
CC2PS
CKE & CLK
≤
V
IL(max)
, tcc =
∞
1
mA
I
CC2N
CKE
≥
V
IH(min)
, CS
≥
V
IH(min)
, tcc = tcc(min)
Input signals are changed one time during 2CLK
20
Precharge Standby Current
in non power-down mode
I
CC2NS
CKE
≥
V
IH(min)
, CLK
≤
V
IL(max)
, tcc =
∞
input signals are stable
10
mA
I
CC3P
CKE
≤
V
IL(max)
, tcc = tcc(min)
10
Active Standby Current
in power-down mode
I
CC3PS
CKE & CLK
≤
V
IL(max)
, tcc =
∞
10
mA
I
CC3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 2clks
All other pins
≥
V
DD
-0.2V or
≤
0.2V
30 mA
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3NS
CKE
≥
V
IH(min)
, CLK
≤
V
IL(max)
, tcc =
∞
input signals are stable
25 mA
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0 mA, Page Burst, All Bank active
Burst Length = 4, CAS Latency = 3
180 150 140
mA 1,2
Refresh Current
I
CC5
t
RC
≥
t
RC(min)
, t
CC
= tcc(min)
180 150 140
mA
Self Refresh Current
I
CC6
CKE
≤
0.2V
1 mA
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.