Section 24 Flash Memory
Rev. 1.00 Apr. 28, 2008 Page 831 of 994
REJ09B0452-0100
24.13 Usage
Notes
1. The initial state of the product at its shipment is in the erased state. For the product whose
revision of erasing is undefined, we recommend to execute automatic erasure for checking the
initial state (erased state) and compensating.
2. For the PROM programmer suitable for programmer mode in this LSI and its program version,
refer to the instruction manual of the socket adapter.
3. If the socket, socket adapter, or product index does not match the specifications, too much
current flows and the product may be damaged.
4. Use a PROM programmer that supports the device with 256-Kbyte on-chip flash memory and
3.3 V programming voltage. Use only the specified socket adapter.
5. Do not power off the Vcc power supply (including the removal of the chip from the PROM
programmer) during programming/erasing in which a high voltage is applied to the flash
memory. Doing so may damage the flash memory permanently. If a reset is input, the reset
must be released after the reset input period of at least 100
µ
s.
6. The flash memory is not accessible until FKEY is cleared after programming/erasing starts. If
the operating mode is changed and this LSI is restarted by a reset immediately after
programming/erasing has finished, secure the reset input period (period of
RES
= 0) of at least
100
µ
s. Transition to the reset state during programming/erasing is inhibited. If a reset is input
accidentally, the reset must be released after the reset input period of at least 100
µ
s.
7. At powering on the Vcc power supply, fix the
RES
pin to low and set the flash memory to
hardware protection state. This power on timing must also be satisfied at a power-off and
power-on caused by a power failure and other factors.
8. In on-board programming mode or programmer mode, programming of the 128-byte
programming-unit block must be performed only once. Perform programming in the state
where the programming-unit block is fully erased.
9. When the chip is to be reprogrammed with the programmer after execution of programming or
erasure in on-board programming mode, it is recommended that automatic programming is
performed after execution of automatic erasure.
10. To program the flash memory, the program data and program must be allocated to addresses
which are higher than those of the external interrupt vector table and H'FF must be written to
all the system reserved areas in the exception handling vector table.
11. If data other than H'FF (4 bytes) is written to the key code area (H'00003C to H'00003F) of the
flash memory, reading cannot be performed in programmer mode. (In this case, data is read as
H'00. Rewrite is possible after erasing the data.) For reading in programmer mode, make sure
to write H'FF to the entire key code area.
Содержание H8S/2100 Series
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Страница 158: ...Section 5 Interrupt Controller Rev 1 00 Apr 28 2008 Page 132 of 994 REJ09B0452 0100...
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Страница 330: ...Section 10 16 Bit Timer Pulse Unit TPU Rev 1 00 Apr 28 2008 Page 304 of 994 REJ09B0452 0100...
Страница 354: ...Section 11 16 Bit Cycle Measurement Timer TCM Rev 1 00 Apr 28 2008 Page 328 of 994 REJ09B0452 0100...
Страница 380: ...Section 12 16 Bit Duty Period Measurement Timer TDP Rev 1 00 Apr 28 2008 Page 354 of 994 REJ09B0452 0100...
Страница 416: ...Section 13 8 Bit Timer TMR Rev 1 00 Apr 28 2008 Page 390 of 994 REJ09B0452 0100...
Страница 494: ...Section 15 Serial Communication Interface SCI Rev 1 00 Apr 28 2008 Page 468 of 994 REJ09B0452 0100...
Страница 612: ...Section 18 I 2 C Bus Interface IIC Rev 1 00 Apr 28 2008 Page 586 of 994 REJ09B0452 0100...
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Страница 752: ...Section 21 FSI Interface Rev 1 00 Apr 28 2008 Page 726 of 994 REJ09B0452 0100...
Страница 774: ...Section 23 RAM Rev 1 00 Apr 28 2008 Page 748 of 994 REJ09B0452 0100...
Страница 1008: ...Section 28 Electrical Characteristics Rev 1 00 Apr 28 2008 Page 982 of 994 REJ09B0452 0100...
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