CHAPTER 19 FLASH MEMORY
User’s Manual U17446EJ3V1UD
282
Figure 19-11. Self Programming State Transition Diagram
Register for
self programming
Self programming mode
Self programming
command under execution
Normal mode
User program
Operation
setting
Operation reference
Flash memory
Flash memory
control block (hardware)
Specific sequence
Self programming
command completion/error
Self programming command
execution by HALT instruction
Operation setting
Table 19-11. Self Programming Controlling Commands
Command Name
Function
Time Taken from HALT Instruction Execution
to Command Execution End
Internal verify 1
This command is used to check if data has been
correctly written to the flash memory. It is used to
check whether data has been written to an entire
block.
Internal verify for 1 block (internal verify
command executed once): 6.8 ms
Internal verify 2
This command is used to check if data has been
correctly written to the flash memory. It is used to
check whether data has been written to multiple
addresses in the same block.
Internal verify of 1 byte: 27
μ
s
Block erasure
This command is used to erase a specified block.
Specify the block number before execution.
8.5 ms
Block blank check
This command is used to check if data in a specified
block has been erased. Specify the block number,
then execute this command.
480
μ
s
Byte write
This command is used to write 1-byte data to the
specified address in the flash memory. Specify the
write address and write data, then execute this
command.
150
μ
s
Remark
The internal verify 1 command can be executed by specifying an address in the same block, but internal
verify 2 command is recommended if data is written to multiple addresses in the same block.
<R>
<R>
<R>
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