EE PRO for TI-89, 92 Plus
Equations - Solid State Devices
78
CL
Load capacitance
F
Cox
Oxide capacitance per unit area
F/m2
D
Diffusion coefficient
m2/s
DB
Base diffusion coefficient
m2/s
DC
Collector diffusion coefficient
m2/s
DE
Emitter diffusion coefficient
m2/s
Dn
n diffusion coefficient
m2/s
Dp
p diffusion coefficient
m2/s
ε
ox
Oxide permittivity
unitless
ε
s
Silicon Permittivity
unitless
Ec
Conduction band
J
EF
Fermi level
J
Ei
Intrinsic Fermi level
J
Ev
Valence band
J
ffmax
Maximum frequency
Hz
γ
Body coefficient
V.5
gd
Drain conductance
S
gm
Transconductance
S
gmL
Transconductance, load device
S
Go
Conductance
S
I
Junction current
A
I0
Saturation current
A
IB
Base current
A
IC
Collector current
A
ICB0
CB leakage, E open
A
ICE0
CE leakage, B open
A
ICsat
Collector I at saturation edge
A
ID
Drain current
A
IDmod
Channel modulation drain current
A
ID0
Drain current at zero bias
A
IDsat
Drain saturation current
A
IE
Emitter current
A
IIf
Forward current
A
Ir
Reverse current
A
Ir0
E-M reverse current component
A
IRG
G-R current
A
IRG0
Zero bias G-R current
A
Is
Saturation current
A
λ
Modulation parameter
1/V
Is
Saturation current
A
kD
MOS constant, driver
A/V2
kL
MOS constant, load
A/V2
kn
MOS constant
A/V2
kn1
MOS process constant
A/V2
kN
MOS constant, n channel
A/V2
kP
MOS constant, p channel
A/V2
KR
Ratio
unitless
L
Transistor length
m
LC
Diffusion length, collector
m
LD
Drive transistor length
m
LE
Diffusion length, emitter
m
LL
Load transistor length
m