8-98
R530/R730
8. Block Diagram and Schematic
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Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
SAMSUNG PROPRIETAR
Y
FOR EM
I
A
Top Max 19mohm
P
A
G
E
SAMSUNG ELECTRONICS CO’S PROPERTY.
4
THIS DOCUMENT CONTAINS CONFIDENTIA
L
B
PART NO
.
RE
V
FOR EM
I
P3.3V Limit ; 4A
D
Bottom Max 11mohm
3
1
DAT
E
3
400KHz/500KHz@RT820
5
APPROVAL
A
LAST EDIT
Set : 3.333V
OF
Elna New($0.09)
Rilim = (Iilim * Rdson)*10/10uA
B
Misan , Maglayer
PSV -> 5.129
245KHz/305KHz@TPS5112
5
P3.3V_AUX & P5.0V_ALW
P3.3V_AUX / P5.0V_AUX
D:/users/mobile29/mentor/Bremen-UL/Bremen-UL_Et
c
2
Rdson
;
C
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHER
S
Set : 5.064
V
Elna New($0.09)
1
MODULE CODE
(Auto Skip
)
330KHz/375KHz@RT8205
4
C
ELECTRONICS
2
TPS51125 2nd
EXCEPT AS AUTHORIZED BY SAMSUNG
.
PROPRIETARY INFORMATION THAT IS
365KHz/460KHz@TPS51125
TITLE
CHECK
D
FCCM -> 5.10
0
P5.0V Limit ; 9A
(PWM
)
DEV. STEP
Misan , Maglayer
AP4232BGM -> NEW
Rdson : Max 32mohm
DRA
W
SAMSUN
G
G_P3.3V
TW.Kim
HJ.Kim
SJ.Park
undefined
01/09/2008
ADV2nd
1.0
October 05, 2009 20:00:56 PM
BA41-xxxxxA
42
50
Bremen-UL
PWR_MV_3V_5V
R660
3.
3
7
D1
D2
8
G
2
S
1
25V
4.7nF
C127
Q20-
1
AP4232BGM-H
F
0505-00258
1
2402-001144 AL 25V
68uF EC12
C843
4700nF-X5R
25
V
0.22nF
C
70
8
50
V
nostuff
P3.3V_MICO
M
G_P3.3V
R662
0
nostuff
6.3V
330uF EC14
2409-00117
5
Can 6T
15mohm
0-1005
SMT11
R1608-SHORT
SHORT
2
3.9uH
L8
CMI-SSP10L48FH-3R9M
2703-00369
5
R665
3.
3
VDC
10
0K
R119
1%
R
65
7
15
K
1%
EC11
68uF
25V
AL
2402-001144
VDC
100nF
C721
25V
P3.3V_MICO
M
100n
F
C
15
0
25
V
P2.0V_RE
F
G_P3.3V
10K
R104
1%
1n
F
C
15
2
50
V
P5.0V_STB
C
71
2
100nF
10V
3
D
G
1
S
2
nostuff
nostuf
f
Q17
RHU002N06
P3.3V_MICOM
1%
R110
1M
R117
680K
nostuff
10
K
R
65
5
1%
1%
P3.3V_AUX
100n
F
C
74
7
25
V
G_P3.3V
50
V
VDC
C
72
5
4700nF-X5R
25V
RHU002N06 Q16
D
3
1
G
2
S
1n
F
C
15
1
R111
100K
0-1005
SMT8
15mohm
CAN 6T
G_P3.3V
1%
D1
5
6
D2
4
G
3
S
2409-001175
EC15
330uF
6.3V
16
24
VOUT
1
7
VOUT
2
VREG
3
8
V
R
E
G
5
17
0505-00258
1
AP4232BGM-H
F
Q20-
2
25 PAD
PGND
15
PGOO
D
23
20
PHASE1
11
PHASE2
3
RE
F
SKIPSE
L
14
TONSEL
4
21
UGATE1
10
UGATE2
VI
N
22
BOOT
1
9
BOOT
2
13
EN
ENTRIP1
1
ENTRIP2
6
2
FB
1
5
FB
2
19
LGATE1
12
LGATE2
18
NC
S3
G_P3.3V
U507
RT8205AGQW
1203-005735
0505-00252
6
AON6912L Q2
1
D1
2
3
D2
D3
4
9
D4
1
G1
8
G2
5
S1
S1_D
2
10
S2
6
7
3
D
G
1
S
2
P3.3V_MICOM
Q15
RHU002N06
R654
15
K
1%
10V
100nF
C204
100K
R105
1%
VDC
C
20
3
10
0n
F
10
V
20
%
C723
22000nF-X5
R
6.3V
nostuff
50
V
C
13
7
1n
F
R
65
6
470K
R663
3.
3
G_P3.3V
1%
nostuff
25
V
C126
10nF
nostuf
f
50
V
C
71
0
0.22nF
25V
C
72
4
100nF
10
V
1% 10
R13
7
G_P3.3V
nostuff
C
70
7
10
0n
F
10000nF-X5
R
C720
6.3V
R107
0
nostuff
1% 30
0K
R118
1%
R664
100K
nostuf
f
130K
R106
1%
G_P3.3V
10
R
13
5
1%
3.9uH
L9
CMI-SSP10L48FH-3R9
M
2703-003695
220nF
C709
16
V
R653
1%
1%
R136
10
P5.0V_ST
B
10
K
G_P3.3V
G_P3.3V
G_P3.3V
25V
G_P3.3V
1%
100nF
C722
P2.0V_REF
R138
10
SYSVR_TONSEL_M
N
SYSVR_FB1_MN
ANS_SYSVR_BG2_M
N
SYSVR_PGOOD_M
N
SYSVR_ENTRIP2_MN
SYSVR_ENTRIP1_MN
MCM3_RST#
SYSVR_SUSPWR1_QRQ_MN
P5.0V_ALW
SYSVR_FB2_M
N
KBC3_SUSPWR
SYSVR_SUSPWR1_RCQ_M
N
PNS_SYSVR_PHASE2_M
N
PNS_SYSVR_TG2_M
N
PNS_SYSVR_PHASE1_M
N
PNS_SYSVR_TG1_M
N
PNS_SYSVR_BST2_M
N
PNS_SYSVR_BST1_M
N
PNS_SYSVR_BST2_RC_MN
PNS_SYSVR_BST1_RC_MN
SYSVR_SKIPSEL_M
N
SYSVR_VIN_MN
PNS_SYSVR_PHASE2_RC_MN
ANS_SYSVR_BG1_MN
PNS_SYSVR_PHASE1_RC_M
N
Summary of Contents for R530
Page 5: ...iii Contents This Document can not be used without Samsung s authorization R530 R730...
Page 64: ...6 40 6 Material List This Document can not be used without Samsung s authorization R530 R730...
Page 240: ...4 23 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...
Page 241: ...4 24 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...
Page 249: ...4 32 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...