8-66
R530/R730
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
3 /
4
RSVD
THERMAL
H CLK
XDP/ITP SIGNALS
0
0
0
BSEL0, BSEL1, BSEL2
1
0
BSEL
*"1111111" : 0V power good asserted.
0
0
0
0
0.7125
V
1
1
0
1
1
1
0
1
1
1
1
1
1
0
FS
B
0
1.4625
V
1
near the CPU
-> delete and change layout (ECAE)
0
1
FS
C
1
0
1
1
1
1
1
0
1
To protect ES
D
1
0
1
0.5500
V
0
SI team request
0
APPROVAL
RE
V
0
1
0
0
1.3125
V
1.0625
V
0
1
0
Minimize coupling of any switching signals to this net
.
1
*Yonah Processor (2.33 GHz / 800 MHz : TBD)
0
0
0.2250
V
0
0
0
0
1
0
0
1
1
0
1
0
0
0
0
0
0.0000
V
1
1
1
0
0
0
0.6000
V
1
0.9125
V
0
1
0
1
1
0
1
1
OF
1.2250
V
0
1
166M
1
1
0
1
1.1750
V
0
0
0
1
MODULE CODE
1
0
0
Active
1
0
0
0
0
0
0
0
0.8125
V
1
0
0
1
0
1
1
0
0
0
DPRSLPVR
1
0
1
1
SAMSUNG ELECTRONICS CO’S PROPERTY.
Pull-down
0
0
1
1.3000
V
0.3500
V
DEV. STEP
0
0.4750
V
0
0.0625
V
1
1
1
0.7250
V
0
0.2500
V
(preferred 50mil) from any other signal. And GND via 100mil away
0.2625
V
1
1
1
266M
1
1
0
0
0.1625
V
0
1
0
0
1
1
0
1
1
0.0000
V
0
1
SAMSUN
G
1
1
1.1375
V
0.1500
V
0
1
1
0
0
0
0
Observe 3:1 spacing b/w VCC/VSSsense lines and 25mil away
1
FSB 800 MHz
1
1
0
1
0
1
0.5375
V
0
1
1
1
DAT
E
1
0
0
0
1
0
1
0
1
0
1
0
0
1
FSB 1067 MHz
1
1
1
1
1
1
0
0
0
0
0
1
0
0
0
0
1
2
0
0
1
1
0
0
0.3375
V
0
1
3
0
0.8250
V
0.5125
V
0
1
1
1
1
1
1
0.4875
V
1
1
0
1
0
0.3750
V
0
1
0
1
0
1
0
0
0
1
0
1
DPRSTP
*
1
1
1
0
0
DRA
W
1
1
0
1
1
1
0
1.1875
V
1
1
1
0
1
1
0.0875
V
1
1
1
0
0.4625
V
0
0
0
0
0
1
0
1
0
1
0
1
1
0
1
0.2875
V
0
1
0
Dual Mode Region
1
1
0
1
0.2375
V
0
1.2625
V
1.3625
V
0
0
0
1
0
0
0
1
0
1
0
1
0
0
0
0
0
0
1
1
0
0
0.5000
V
0
1
0
1
1
1
1
0
0
1
1
1
1.1125
V
1
1
0.5875
V
1
0
1
1
0.0750
V
0
0
0
0
0
1
1
1
0
0
1
1
1
1
0
1
1
0
TITLE
1
0
V
57
84
.1
1
0
1
0.3250
V
1
0.3000
V
0
0.7875
V
1
0
1
0.4500
V
0
1
0
0
0
1
0.0375
V
1
1
Deeper Sleep/Extended Deeper Slee
p
1
1
0.6875
V
0
0
1
0
1
0
0
1
0.0500
V
1
0
1
1
1
0
1
0
0
1
0
1
0
1
0.6375
V
1
1
0
0.5250
V
1
0
1
1
1
1
0.4000
V
1
1
0.3125
V
0
1
1
IMVP-6
1
0
0
1
0
1
0
0
1
0
1
1
0
1
0
1
0.0250
V
0
1
1
0
0
0 or
1
PSI2*
1
1.4750
V
1
1
0
1.4000
V
0
1
1
0
1
1
1.4500
V
1
0
1
0
0.8375
V
0
1
0
0
1
1
1
0
1
0.0000
V
1
C
0
4
0
1
1
1
0.5750
V
1
EXCEPT AS AUTHORIZED BY SAMSUNG.
0
0
1
0
0.4375
V
0
0
1
1
1
0.2750
V
1
0
1.0750
V
1
0
0
1
0
Deeper Slp
1
0
0
0
0
0.9375
V
1
1
1
1
1
1
0.3625
V
1
1
1
1
1
0
0
Voltage
0
1
1
1
0
0
0
0
0
0
1
0
C
1
0
0
0
1
of the first GTLREF0 pin with Zo=55ohm trace.
0
0
0
VID(6:0)
1
1.0000
V
1
0
0
1
1
1
1
0
0
0
0
1
1
0
0.8500
V
1
0
1
0
GTLREF : Keep the Voltage divider within 0.5"
0.1125
V
1.2750
V
0
0.3875
V
1
1
1
1.2875
V
0
trace shorter than 1/2" to their respective Banias socket pins
.
0
1
0
1
1
0
1
1
0.6500
V
0
0
0.6750
V
D
0.6250
V
0
0
1
Active Mode
0.1375
V
1
0
1
0
0.0000
V
1
0
0
1
0
1
0.5625
V
0
0
1
1
0
1
0.4250
V
0
1
1
1
CHECK
1.2375
V
0
PSI2*
0
1
1.0375
V
1.0500
V
0.0125
V
1
1
0
1
0
1
0
1.3875
V
1
1
0.0000
V
0.0000
V
0
1
0
1
0
0
1
1
0.7750
V
0
PROPRIETARY INFORMATION THAT IS
1.2125
V
0
0.7375
V
0
1
1
1
0
0
1
Active/Deeper Sleep
1
PAGE
0
1
0
1
0
1
3
1
1
0
1
1
0
0
1
1
1
1
0
0 0
1.3250
V
0
0
0.7625
V
0.7000
V
0
0
0
1
0.9875
V
0
1
0
1
0
1
0
Voltage
0
1
1
1
0
0
1
0.8000
V
0
B
1
0
0
1
0
0
1
1.1500
V
0
1
0
0
1.0125
V
1.1000
V
1
1.4375
V
1
0
1
1
1
1
1
0
1.3750
V
0.2125
V
1
0
1
1
1
0
0
1
1
0.7500
V
1
1
1
1
0
0
1.4125
V
1
0
1
1
0
1
0
0
1
0
SAMSUNG PROPRIETAR
Y
0
0
0
0
1
0
0
0
1
1
1
0
1
1
1
1
0
0
1.0875
V
1
1
0
1
0.0000
V
0
1.1250
V
0
from each of the VCC/VSS test point vias
.
0
0
0
1
1
0
1
1
0.6125
V
1
COMP0,2(COMP1,3) should be connected with Zo=27.4ohm(55ohm)
0
0
1
1
1
0
0.1250
V
0
0
0
1
0
0.9625
V
0
1
1
0
0
1
0
0
1
1
1
0
0
0
0
1
1
0
1
1
0
A
D
0
Dual Mode Region
0.9750
V
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
0
1
0
0
1
1
0
1
0
1
1
PART NO
.
0
1
1
0
0.8625
V
0
1
DPRSTP
*
0
0
1
1
0
0
1
1.0250
V
1
0 or
1
1
1
0
1
1
1
1
1
1
0
0
1
1.2500
V
0
1
1
0.4125
V
0
0
0
1.1625
V
1
1
0
1.3500
V
1
0
0
1
0
0
0
0
0
0
0
1
1
0
0
1
0
1
CPU Core Voltage Tabl
e
1
0
1
1
0
0
0
0
0
1
GND test points within 100mil of the VCC/VSSsense at the end of the line.
0.2000
V
DPRSLPVR
0
1
1
0
0
1
0
0
1
VID(6:0)
0
0
0
1
0
0.6625
V
0
Voltage
0
1
0
1
1
0
0.0000
V
VID(6:0)
1.4250
V
0.8875
V
1
0.1750
V
1
1
0.1000
V
1
0
1
1
1
1
1.2000
V
0
0.9000
V
1
1
1
0.8750
V
0
0
1.3375
V
1
THIS DOCUMENT CONTAINS CONFIDENTIAL
0
1
0
0
0
1
0
1
1
0
0
0
1
0
0
1
0
1
1
1
0
1
1
1
LAST EDIT
0
1
1
1
0
0.9250
V
1
1
1
1
0
1
1
1
1
0
0
0
1
0
1
4
0
0
1
0
0
0
1
200M
0
0
0
0
0
0
0
0
FRQ
0
0
1
1
0
1
0
0.1875
V
0
1
0
ELECTRONICS
1
1
0
0
0
0
0
1
1
1
1
0
1.5000
V
1
Route the VCC/VSSsense as a Zo=55ohm traces with equal length.
0.9500
V
TW.Kim
HJ.Kim
SJ.Park
undefined
9/23/2008
ADV2nd
1.0
October 05, 2009 20:00:56 PM
BA41-xxxxxA
10
50
Bremen-UL
CPU
PENRYN (2/3
)
D:/users/mobile29/mentor/Bremen-UL/Bremen-UL_Etc
1
1
1
BSEL0, BSEL2
0
1
FS
A
0
1
1
A
0
2
0
0
1%
R525
54.9
6.3V
C594
10nF
C
57
8
10000nF-X5R
25
V
2
100nF
C559
10V
P1.05V
nostuf
f
0
5
2.5V
27.4
1%
R54
7
nostuf
f
EC501
220uF
P1.5V
R
50
9
2K
10V
C558
100nF
1%
R
52
6
1K
1%
10
0n
F
C557
10
V
3
1%
R520
54.9
M2
1
VCCP_
9
AF
7
VCCSENS
E
VID_
0
AD6
VID_
1
AF
5
VID_
2
AE
5
VID_
3
AF
4
VID_
4
AE3
VID_
5
AF
3
VID_
6
AE2
AE
7
VSSSENS
E
VCCP_13
W2
1
VCCP_14
V6
VCCP_15
G21
VCCP_16
J6
VCCP_
2
M6
VCCP_
3
N6
VCCP_
4
T6
VCCP_
5
R6
VCCP_
6
K2
1
VCCP_
7
J2
1
VCCP_
8
THRMDA
A2
4
THRMDC
B2
5
AB5
TM
S
AB
6
TRST
#
B2
6
VCCA_
1
C26
VCCA_
2
K6
VCCP_
1
N21
VCCP_10
T2
1
VCCP_11
R21
VCCP_12
V2
1
AB
3
TD
O
C23
TEST
1
TEST
2
D25
C24
TEST
3
AF26
TEST
4
AF
1
TEST
5
A2
6
TEST
6
C3
TEST
7
C7
THERMTRIP#
N5
RSVD_3
T2
RSVD_4
V3
RSVD_5
B2
RSVD_6
D2
RSVD_7
D22
RSVD_8
D3
RSVD_9
F6
D7
SLP#
AC5
TC
K
AA
6
TD
I
E5
DPRSTP
#
B5
DPSLP#
D24
DPWR
#
AD2
6
GTLREF
PRDY#
AC2
PREQ#
AC1
D21
PROCHOT
#
AE
6
PSI
#
D6
PWRGOOD
RSVD_1
M4
RSVD_2
B
P
M
3#
AC4
BSEL
0
B2
2
BSEL
1
B2
3
BSEL2
C21
R26
COMP
0
U26
COMP
1
COMP
2
AA1
Y1
COMP
3
DBR#
C20
0143854500|bga_479p_soc
k
CPU1-
3
PENRYN
BCLK0
A2
2
BCLK1
A2
1
BPM0#
AD4
B
P
M
1#
AD3
B
P
M
2#
AD1
R54
6
1%
54.9
nostuf
f
50
V
0.1n
F
C57
1
10V
C554
100nF
P1.05V
R524
54.9
1%
27.4
1
R
52
2
1%
56
R
56
4
4
1%
R52
3
54.9
10
0n
F
C555
10
V
P1.05V
1%
R521
54.9
nostuff
10
V
C556
10
0n
F
C
51
7
100n
F
10V
nostuf
f
6
P1.05V
CPU1_GTLREF_MN
CPU1_TRST
#
CPU1_THRMTRIP#
CPU1_DPWR
#
CPU1_PSI#
CPU1_BSEL0 CPU1_BSEL1 CPU1_BSEL2
CPU1_VCCSENSE
CPU1_TCK
CPU1_TDI
CPU1_TMS
ITP3_DBRESET
#
CPU1_PROCHOT#_M
N
CPU1_COMP3_M
N
CPU1_COMP1_M
N
CPU1_COMP2_M
N
CPU1_COMP0_M
N
CPU1_TCK
CPU1_TDI
CPU1_TM
S
CPU1_TRST#
CPU1_VID(6:0)
CLK0_HCLK0
CLK0_HCLK0#
CPU1_PWRGDCPU
CPU1_DPSLP#
CPU1_SLP
#
CPU1_VSSSENSE
CPU1_DPRSTP#
CPU2_THERMD
A
CPU2_THERMD
C
Summary of Contents for R530
Page 5: ...iii Contents This Document can not be used without Samsung s authorization R530 R730...
Page 64: ...6 40 6 Material List This Document can not be used without Samsung s authorization R530 R730...
Page 240: ...4 23 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...
Page 241: ...4 24 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...
Page 249: ...4 32 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...